Micro LED Electrode Layout With Side Extensions for Transfer Alignment
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Solution Overview
Problem
As micro LED chips decrease in size, the narrower gap between electrodes increases the possibility of defects due to alignment errors during transfer onto a display substrate, limiting the reduction of chip size.
Innovation Solution
The semiconductor light emitting device features a semiconductor structure with a side extension structure and electrodes that extend horizontally, allowing for a larger gap between electrodes, and includes a method of manufacturing where electrodes are formed on a transfer substrate, enabling precise alignment and reducing alignment errors.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Productivity
If the size of micro LED chip is reduced, then the productivity and display resolution are improved, but the gap between electrodes becomes narrower which increases the possibility of defects due to alignment error
Solution Approach 1:
The electrode structure transitions from a simple planar configuration to a three-dimensional configuration by extending electrodes along the sidewalls of the semiconductor structure. This vertical extension adds a new dimensional aspect to electrode placement, allowing the horizontal gap between electrodes to be increased independently of the chip size reduction, thereby resolving the alignment error issue while maintaining small chip dimensions.
Solution Approach 2:
The side extension structure is formed in advance before the final electrode positioning and transfer process. This preliminary formation of extended electrode structures along the sidewalls ensures that adequate horizontal spacing is established prior to transfer, pre-compenstating for potential alignment errors during the transfer process onto the display substrate.
2Manufacturing precision
If the gap between electrodes is increased to prevent alignment errors, then the manufacturing precision is improved, but the chip size cannot be reduced further
Solution Approach 1:
By extending electrodes vertically along the sidewalls of the semiconductor structure, the design utilizes the vertical dimension to achieve the required electrode separation. This allows the horizontal gap between electrodes to be sufficiently large for accurate alignment while the overall chip footprint remains minimized, thus resolving the contradiction between manufacturing precision and chip size reduction.
Solution Approach 2:
The side extension structure creates localized electrode extensions specifically at the sidewall regions, concentrating the spacing enhancement where it is most critical for alignment. The main body of the chip remains compact while only specific regions (the sidewall areas) are extended to provide the necessary horizontal gap, allowing local optimization without compromising overall chip miniaturization.
Data Source
AI summary
Provided is a semiconductor light emitting device including a semiconductor structure including a first semiconductor layer, a light emitting layer, and a second semiconductor layer, a side extension structure disposed adjacent to a sidewall of the semiconductor structure, a first electrode having a first portion extending through the second semiconductor layer and the light emitting layer and electrically connected to the first semiconductor layer, and a second portion extending on an upper surface of the side extension structure in a horizontal direction, and a second electrode having a first portion electrically connected to the second semiconductor layer and a second portion extending on the upper surface of the side extension structure in the horizontal direction.