Micro LED Sidewall Insulation Without Photolithography
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Solution Overview
Problem
Existing methods for manufacturing semiconductor light emitting devices fail to effectively form insulating layers on the lateral faces of the devices before separation from the growth substrate, leading to potential charge arcing and contamination issues during the pickup process, and require expensive high-precision photolithography equipment for precise removal of insulating layers on the growth substrate.
Innovation Solution
A method is developed where the insulating layer is formed on the lateral faces of the semiconductor light emitting diodes before separation from the growth substrate, followed by dry etching to remove the insulating layer from the growth substrate without using a mask, ensuring complete removal and maintaining insulation on the lateral faces.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Ease of manufacture
If insulating layer is formed after separation from growth substrate, then manufacturing process is simpler, but charge arcing and contamination occur during pickup process
Solution Approach 1:
The insulating layer is formed on the lateral faces of the semiconductor light emitting diode before the diode is separated from the growth substrate. This preliminary formation of the insulating layer prevents charge arcing and contamination during the pickup process, while still allowing for a relatively simple manufacturing process.
2Manufacturing precision
If photolithography is used to remove insulating layer, then precise removal is achieved, but expensive high-precision equipment is required
Solution Approach 1:
The insulating layer is selectively removed from the growth substrate surface using wet etching with ammonium fluoride solution, extracting only the necessary portion of the insulating layer while leaving the lateral face insulation intact. This eliminates the need for expensive photolithography equipment while achieving precise removal where needed.
3Reliability
If insulating layer covers growth substrate, then complete insulation is achieved, but insulating layer must be removed from substrate
Solution Approach 1:
The insulating layer is applied uniformly across the growth substrate surface and then selectively removed only from the substrate areas between adjacent diodes using wet etching. This local removal approach maintains complete insulation on the lateral faces while enabling efficient manufacturing without requiring mask alignment.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach allows for efficient insulation of lateral faces without the need for high-precision photolithography, reducing manufacturing costs and preventing charge arcing and contamination, while enabling the production of micro semiconductor light emitting devices with improved reliability and efficiency.
Implementation Method 1
subsequently, the insulating layer may be removed from a growth substrate by wet etching with an ammonium fluoride solution
Implementation Method 2
removing the insulating layer (S6) from the growth substrate by dry etching, without a mask
Data Source
AI summary
The disclosure relates to a semiconductor light emitting device from which a growth substrate is removed, comprising: a semiconductor light emitting diode including a first semiconductor layer having a first conductivity, an active layer for generating light by electron-hole recombination, and a second semiconductor layer having a second conductivity different from the first conductivity, in which the first semiconductor layer is formed in a direction where the growth substrate is removed; a metal layer formed on the second semiconductor layer; and an insulating layer for covering lateral faces of the semiconductor light emitting diode and lateral faces of the metal layer, and a manufacturing method for such a semiconductor light emitting device.