Micro Light-Emitting Structure With Sidewall Reflector for Dense Pixels
Find Innovative SolutionsGenerate Solutions
Solution Overview
Problem
Existing micro light-emitting elements, such as those described in JP-A-2021-82687, suffer from increased size due to a separated reflective wall and transparent insulating film, leading to a low density of pixel arrangement.
Innovation Solution
A light-emitting device design featuring a first electrode, a second electrode, a first semiconductor layer, a second semiconductor layer, a light-emitting layer, an insulating layer, and a metal layer that reflects light generated at the light-emitting layer, with the metal layer positioned to output light from the side of the first electrode, reducing the element size and allowing for higher pixel density.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If the reflective wall is separated from the transparent insulating film, then the light reflection function is improved, but the element size increases
Solution Approach 1:
The patent combines the reflective wall and transparent insulating film into a single integrated structure. The reflective wall is formed as a continuous layer that extends along the side surface of the semiconductor layer, while the transparent insulating film is positioned to cover the reflective wall and work together as a unified component. This integration maintains the light reflection function while reducing the overall element size, enabling higher pixel density arrangements.
2Quantity of substance
If the element size is reduced, then the pixel density is improved, but the manufacturing precision requirement increases
Solution Approach 1:
The patent utilizes the side surface dimension of the semiconductor layer to position the reflective wall and transparent insulating film structure. By extending these components along the side surface rather than only in the planar direction, the design achieves compactness without compromising manufacturing feasibility. The reflective wall follows the contour of the side surface, allowing precise positioning through standard semiconductor fabrication processes.
3Power
If the metal layer is positioned to reflect light from the side surface, then the light output efficiency is improved, but the current flow control becomes more complex
Solution Approach 1:
The patent applies different properties to different regions of the semiconductor structure. The side surface region is specifically designed with the reflective wall and transparent insulating film to optimize light reflection, while the top surface maintains standard electrode and contact structures for simplified current injection. This localized differentiation allows efficient side-surface light extraction without complicating the overall current flow control.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The design enables a more compact arrangement of light-emitting devices, enhancing pixel density and improving light output efficiency by reducing current flow and damage to semiconductor surfaces.
Implementation Method 1
a metal layer provided in contact with the insulating layer and along the side surface of the first semiconductor layer and configured to reflect light generated at the light-emitting layer
Data Source
AI summary
A light-emitting device includes: a first semiconductor layer having a first electric conductivity type; a second semiconductor layer provided between the first semiconductor layer and a second electrode and having a second electric conductivity type; a light-emitting layer provided between the first semiconductor layer and the second semiconductor layer; an insulating layer provided along a side surface of the first semiconductor layer; and a metal layer provided in contact with the insulating layer and along the side surface of the first semiconductor layer and that reflects light outputted from the first electrode side. The metal layer includes a first end in a first direction directed from the light-emitting layer toward the first semiconductor layer. The first semiconductor layer includes a second end in the first direction. In the first direction, a position of the first end is equal to or different from a position of the second end.