Micro-LED Directionality via Slotted Antennas and Quantum Well Intermixing

The patent applies local quality by creating a quantum well structure with specific compositional gradients in the active region. The quantum well contains intermediate composition layers that locally modify the band structure to enhance radiative recombination probability, while the surrounding barrier layers provide confinement. This local structural optimization addresses the non-radiative recombination issue specifically in the critical active region without requiring overall device enlargement.

The patent employs composite materials by combining multiple semiconductor layers with different compositions (e.g., InGaN quantum wells with GaN barriers, or AlInGaP layers). This composite structure creates quantum confinement effects and strain engineering that improve radiative efficiency. The heterogeneous material system allows optimization of each layer's properties to collectively enhance light emission while maintaining small device dimensions.

The patent applies preliminary action by performing low-temperature doping processes before high-temperature annealing steps. The initial doping at lower temperatures prevents excessive diffusion and defect formation, while the subsequent annealing step activates the dopants and repairs radiation damage. This sequential approach maintains manufacturing feasibility while significantly improving device reliability and reducing defect density in the final product.

The patent utilizes parameter changes by optimizing doping temperatures, annealing temperatures, and processing times specifically for micro-LED dimensions. The doping temperature is controlled to be lower than conventional processes to prevent defect formation, while annealing temperature and duration are optimized to activate dopants without causing excessive diffusion. These parameter adjustments maintain ease of manufacture while dramatically improving reliability.