Micro LED Sidewall Passivation With Tantalum Oxide for Efficiency
Find Innovative SolutionsGenerate Solutions
Solution Overview
Problem
The miniaturization of light-emitting diodes (LEDs) to micro or nano units results in a decrease in luminescence efficiency.
Innovation Solution
A semiconductor light-emitting device is developed with a light-emitting stack structure and a tantalum oxide passivation film to enhance luminescence efficiency. The light-emitting stack structure includes a first semiconductor layer, an active layer, and a second semiconductor layer, with the tantalum oxide passivation film applied to the side surfaces. This configuration improves the emission efficiency of light in the range of 400 nm to 550 nm.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Volume of moving object
If LEDs are miniaturized to micro or nano units, then device size is reduced, but luminescence efficiency decreases
Solution Approach 1:
A passivation film with thickness of 1 nm to 50 nm is formed on the side surface of the light-emitting stack structure. This thin film protects the semiconductor layers from surface defects and environmental degradation while maintaining the miniaturized device size, thereby preserving luminescence efficiency in micro or nano-scale LEDs
Solution Approach 2:
The passivation film is composed of multiple materials including tantalum oxide (Ta2O5), silicon oxide (SiO2), silicon nitride (SiN), and aluminum oxide (Al2O3). This composite structure provides enhanced protection against surface defects and environmental factors, effectively combating the luminescence efficiency loss associated with miniaturization
2Reliability
If passivation film thickness is increased to protect from external stress, then protection efficiency is improved, but device size increases
Solution Approach 1:
The passivation film is designed with optimal thickness of 1 nm to 50 nm, which is sufficiently thin to maintain the miniaturized device size but thick enough to provide effective protection from surface defects, moisture, and external physical and chemical stress on the light-emitting stack structure
Solution Approach 2:
Multiple layers of different passivation materials (tantalum oxide, silicon oxide, silicon nitride, aluminum oxide) are combined to provide comprehensive protection against various external stresses, achieving high reliability without requiring excessive thickness that would increase device size
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The use of a tantalum oxide passivation film in the semiconductor light-emitting device significantly increases luminescence efficiency, addressing the efficiency loss associated with miniaturization, while also protecting the device from external physical and chemical stress.
Implementation Method 1
a first passivation film provided on a side surface of the light-emitting stack structure
Data Source
AI summary
A semiconductor light-emitting device includes a light-emitting stack structure including a first semiconductor layer, an active layer provided on the first semiconductor layer, and a second semiconductor layer provided on the active layer, and a first passivation film provided on a side surface of the light-emitting stack structure.