Micro LED TFT Layout With ESD Protection for Higher Drive Current
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Solution Overview
Problem
The driving performance of light emitting devices in electronic devices needs improvement to reduce costs, particularly in display devices such as LEDs, micro LEDs, and mini LEDs, where the driving thin film transistors require enhanced efficiency and reliability.
Innovation Solution
A display device and backlight module with a driving thin film transistor that includes a channel layer and electrostatic discharge protection device, where the distance between connecting posts is greater than the channel length, and the channel layer is formed of a semiconductor layer to enhance driving current and protect against electrostatic discharge.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Productivity
If the channel length of the driving thin film transistor is reduced to increase driving current, then the driving performance improves, but the transistor becomes more susceptible to electrostatic discharge damage and electrical leakage
Solution Approach 1:
The patent applies preliminary action by incorporating an electrostatic discharge protection device and optimizing the channel layer structure before the transistor operates. The protection device is pre-configured to prevent electrostatic discharge damage, and the channel layer is pre-formed with appropriate thickness and material properties to reduce electrical leakage, allowing the transistor to safely operate with reduced channel length for higher driving current.
Solution Approach 2:
The patent implements beforehand cushioning by adding an electrostatic discharge protection device that acts as a buffer against electrostatic damage. This protection mechanism is prepared in advance to absorb or divert electrostatic discharge away from the sensitive transistor channel, enabling the use of shorter channel lengths without compromising reliability against electrostatic damage.
2Productivity
If the distance between connecting posts is increased to improve light emitting device performance, then the driving efficiency increases, but the device area increases
Solution Approach 1:
The patent applies parameter changes by optimizing the channel layer thickness and material composition to achieve high driving efficiency within a compact area. By adjusting the channel layer parameters (thickness, material properties) rather than simply increasing the distance between connecting posts, the patent maintains high driving efficiency while controlling the overall device area.
3Productivity
If a semiconductor layer is used to form the channel layer to enhance driving current, then the transistor performance improves, but the manufacturing complexity increases
Solution Approach 1:
The patent applies parameter changes by selecting specific semiconductor materials and optimizing the channel layer thickness to achieve high driving current while maintaining compatibility with existing manufacturing processes. By carefully controlling the semiconductor layer parameters rather than fundamentally changing the manufacturing approach, the patent enhances performance while limiting the increase in manufacturing complexity.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The solution increases driving current and enhances the reliability of the thin film transistor by preventing electrical leakage and damage during the transfer process, improving the overall performance and efficiency of the light emitting devices.
Implementation Method 1
The at least one driving thin film transistor includes a channel layer, and a distance between the first connecting post and the second connecting post is greater than a channel length of the channel layer
Implementation Method 2
the display device further comprises an electrostatic discharge protection device; wherein the channel layer is formed of a semiconductor layer, and the electrostatic discharge protection device comprises a semiconductor formed of the semiconductor layer
Data Source
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AI summary
A display device is characterized by a substrate (110), a driving circuit structure (DCS) and at least one light emitting device (LD). The driving circuit structure (DCS) is disposed on the substrate (110) and has at least one driving thin film transistor (DT). The at least one light emitting device (LD) has a first connecting post (CP1) and a second connecting post (CP2) thereby being disposed on the driving circuit structure (DCS), and the at least one light emitting device (LD) is electrically connected to the at least one driving thin film transistor (DT) through the first connecting post (CP1). The at least one driving thin film transistor (DT) includes a channel layer (CLd), and a distance between the first connecting post (CP1) and the second connecting post (CP2) is greater than a channel length (Ld) of the channel layer (CLd).