Micro-LED Transfer via Single GaAs Substrate Epitaxy
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Solution Overview
Problem
Current micro-LED transfer methods are inefficient as they require separate processes for forming and transferring micro-LEDs of different colors, limiting the ability to transfer multiple colors in a single pass.
Innovation Solution
A method involving epitaxial growth of blue, green, and red micro-LEDs on a single GaAs substrate, followed by fabrication of metal electrodes and bonding with bumping electrodes on a receiving substrate, with subsequent removal of the GaAs substrate, allowing for the transfer of micro-LEDs of various colors in one pass.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Productivity
If separate processes are used for forming and transferring micro-LEDs of different colors, then the transfer process can be completed, but the production efficiency is limited and multiple passes are required
Solution Approach 1:
The patent combines the formation and transfer processes of micro-LEDs with different colors (blue, green, red) into a single integrated process. Multiple color micro-LEDs are grown on different regions of the same GaAs substrate simultaneously, then transferred together in one pass to the receiving substrate, eliminating the need for separate processes for each color and significantly improving production efficiency
2Productivity
If multiple color micro-LEDs are transferred in one pass, then production efficiency is improved, but the process complexity increases
Solution Approach 1:
The patent divides the GaAs substrate into different regions for growing different color micro-LEDs (blue, green, red) with specific material compositions and structures. Each region is optimized for its specific color while maintaining compatibility with the unified transfer process, allowing multi-color transfer in one pass without excessive complexity
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach reduces processing steps and enhances production efficiency by enabling the transfer of multiple color micro-LEDs in a single pass, improving the manufacturing efficiency of micro-LED devices.
Implementation Method 1
epitaxially growing micro-LEDs of two or all of the three colors on corresponding selected areas of a single GaAs original substrate
Implementation Method 2
at least red micro-LEDs are epitaxially grown on the single GaAs original substrate, the red micro-LED being epitaxially grown from the GaAs material
Implementation Method 3
removing the GaAs original substrate comprises: removing the GaAs original substrate by means of laser lifting-off
Implementation Method 4
removing the original substrate comprises: removing the GaAs original substrate by means of wet etching
Implementation Method 5
The melting point of the bumping electrodes is lower than or equal to 350° C.
Data Source
AI summary
The present disclosure discloses a micro-LED transfer method, a manufacturing method, device and an electronic apparatus. The transfer method comprises: in accordance with a sequence of micro-LEDs of blue, green and red, epitaxially growing micro-LEDs of two or all of the three colors on a single GaAs original substrate; epitaxially growing bumping electrodes corresponding to the micro-LEDs on a receiving substrate; bonding the micro-LEDs of the two or all of the three colors with the bumping electrodes on the receiving substrate; and removing the GaAs original substrate. The method can be used to transfer micro-LEDs of a variety of colors, in order to improve the production efficiency.