Micro LED Transfer via Insulating Layer and Sacrificial Etching
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Solution Overview
Problem
Conventional micro light emitting diode (LED) manufacturing processes face challenges such as precision issues, low transfer yields, long transfer times, and high processing costs, particularly in the mass transfer technology used for micron-sized LEDs.
Innovation Solution
A micro light emitting diode structure comprising a die-bonding substrate, an adhesive layer, undoped III-V group semiconductor layers, a light emitting layer, and a P-type III-V group semiconductor layer, with an insulating layer that supports the structure and aids in the manufacturing process, including a method that involves forming a sacrificial layer and using electrochemical selective etching to suspend the micro LED over the substrate, reducing the need for high-cost equipment like laser lift-off.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Productivity
If conventional mass transfer technology is used for micro LED manufacturing, then the process can be completed, but the transfer yield is low and transfer time is long
Solution Approach 1:
The patent introduces an insulating layer as an intermediary component between the substrate and the micro LED structure. This insulating layer facilitates the transfer process by providing electrical isolation and mechanical support, enabling higher transfer yields and reduced transfer times compared to conventional direct transfer methods
Solution Approach 2:
The insulating layer is formed in advance before the micro LED structures are transferred and positioned. This preliminary formation of the insulating layer prepares the substrate in advance, allowing for more efficient subsequent transfer operations and improving overall process productivity
2Ease of manufacture
If conventional mass transfer technology is used for micro LED manufacturing, then the process can be completed, but the processing cost is high
Solution Approach 1:
The patent employs a sacrificial layer that is intentionally designed to be removed after serving its temporary purpose during the transfer process. This disposable sacrificial layer approach simplifies the overall manufacturing process and reduces costs by eliminating the need for complex high-cost equipment like laser lift-off systems
Solution Approach 2:
The patent extracts and removes the sacrificial layer after the micro LED structures have been transferred to the insulating layer. This extraction of the temporary sacrificial component simplifies the final structure and reduces manufacturing complexity, thereby lowering processing costs while maintaining high manufacturing efficiency
3Length of moving object
If micron-sized LEDs are manufactured, then the device size is reduced, but precision requirements increase
Solution Approach 1:
The patent applies local quality by creating specific patterns in the insulating layer and sacrificial layer that provide localized positioning features. These localized structural features enable precise positioning of micron-sized LEDs without requiring high precision across the entire substrate, thereby improving manufacturing precision for small devices
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach enhances manufacturing efficiency by reducing costs and transfer time while improving yield, specifically addressing the precision and support challenges in micron-sized LED production.
Implementation Method 1
using electrochemical selective etching to suspend the micro LED over the substrate
Data Source
AI summary
A micro light emitting diode includes a die-bonding substrate, an adhesive layer, an undoped III-V group semiconductor layer, an N-type III-V group semiconductor layer, a light emitting layer, and a P-type III-V group semiconductor layer. The adhesive layer is disposed on the die-bonding substrate. The undoped III-V group semiconductor layer is disposed on the adhesive layer, and the adhesive layer is between the die-bonding substrate and the undoped III-V group semiconductor layer. The N-type III-V group semiconductor layer is disposed on the undoped III-V group semiconductor layer. The light emitting layer is disposed on the N-type III-V group semiconductor layer. The P-type III-V group semiconductor layer is disposed on the N-type III-V group semiconductor layer, and the light emitting layer is between the N-type III-V group semiconductor layer and the P-type III-V group semiconductor layer.