Micro LED Display Panel Same-Plane Transistor Integration
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Solution Overview
Problem
The application of micro LEDs in display devices is hindered by the lack of technology to accurately and efficiently transfer micro LED chips to each pixel on the display panel, resulting in high defect rates and increased production costs due to the need for precise transfer processes and stacked structures.
Innovation Solution
A micro LED display panel configuration where micro LEDs and transistor elements are arranged on the same plane, with a substrate having a light emitting region and a driving region, connected by low-aspect-ratio contact holes, eliminating the need for chip transfer and allowing for a thinner panel structure and simplified connection wiring.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If micro LED chips are transferred to each pixel on the display panel, then the display can be formed, but the transfer process requires high accuracy and increases production cost
Solution Approach 1:
Instead of transferring micro LED chips to pre-formed pixel locations, the patent inverts the process by forming transistor elements and connection structures first, then growing micro LED chips in-place through epitaxial growth. This eliminates the transfer process entirely, resolving the contradiction between transfer accuracy and production speed.
Solution Approach 2:
The patent performs preliminary actions by pre-forming transistor elements, contact holes, and connection wiring structures before forming the micro LED chips. This preliminary preparation enables direct in-place growth of LEDs without requiring subsequent transfer operations, thereby improving both accuracy and productivity.
2Productivity
If a stacked structure is used to form pixels without chip transfer, then production cost may be reduced, but the panel thickness increases and connection complexity increases
Solution Approach 1:
The patent merges the micro LED chip formation process with the transistor element fabrication process. Both structures are formed on the same substrate plane through integrated epitaxial growth and patterning steps, eliminating the need for separate stacked layers and reducing overall panel thickness while maintaining cost efficiency.
Solution Approach 2:
The patent transitions from a vertical stacked structure to a planar integrated structure. By arranging micro LED chips and transistor elements on the same plane rather than stacking them vertically, the panel thickness is reduced while still achieving the desired pixel formation without chip transfer.
3Reliability
If contact holes with high aspect ratio are formed to connect transistor element and micro LED, then connection is achieved, but process accuracy requirement increases
Solution Approach 1:
The patent changes the geometric parameters of contact holes by forming them with lower aspect ratios. This is achieved through optimized etching processes and adjusted contact hole dimensions, allowing reliable electrical connection between transistor elements and micro LED chips while significantly reducing the required manufacturing precision.
Data Source
AI summary
A micro LED display panel according to the present disclosure includes a substrate including a light emitting region and a driving region; a micro LED arranged in the light emitting region on the substrate, a transistor element arranged in the driving region on the substrate and driving the micro LED, a first connection wiring electrically connecting the micro LED and the transistor, and a color adjustment layer arranged in the light emitting region under the substrate. The micro LED display panel according to the present invention can form the micro LED and the transistor element for driving the micro LED on a growth substrate such as a sapphire substrate together on the same plane so that the micro LED does not require a transfer process, and it is possible to manufacture polysilicon when manufacturing the micro LED, and can simplify the process.