Micro LED Panel Transistor Electron Mobility Leakage Current
Find Innovative SolutionsGenerate Solutions
Solution Overview
Problem
Current micro light emitting diode (micro LED) display panels face challenges in achieving high electron mobility and reliability, particularly with low-temperature polycrystalline silicon thin film transistors (LTPS TFT) experiencing high leakage current and amorphous oxide semiconductor transistors failing to meet high-resolution display requirements.
Innovation Solution
The implementation of a micro light emitting diode panel with a circuit substrate featuring both thin film transistors and transistor elements, where the thin film transistors are formed during manufacturing and the transistor elements are transferred and bonded onto the substrate, offering significantly different electron mobilities and improved operational electrical properties.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Speed
If low-temperature polycrystalline silicon thin film transistors (LTPS TFT) are used to improve electron mobility, then electron mobility is improved, but leakage current increases
Solution Approach 1:
The patent applies local quality by using different semiconductor materials in different regions of the transistor structure. Specifically, it employs low-temperature polycrystalline silicon for the channel region to achieve high electron mobility, while using amorphous oxide semiconductor for the source and drain regions to reduce leakage current. This spatial differentiation of material properties resolves the contradiction between speed and harmful factors.
2Object-generated harmful factors
If amorphous oxide semiconductor is used to reduce leakage current, then leakage current is reduced, but electron mobility decreases
Solution Approach 1:
The patent implements local quality by strategically placing amorphous oxide semiconductor in the source and drain regions where low leakage current is critical, while reserving the channel region for low-temperature polycrystalline silicon to maintain high electron mobility. This localized material assignment allows the system to benefit from both material properties in their respective optimal locations.
3Adaptability or versatility
If micro light emitting diodes are transferred and bonded to circuit substrate, then process flexibility is improved, but manufacturing complexity increases
Solution Approach 1:
The patent applies segmentation by dividing the display device into two independently manufactured components: the circuit substrate containing thin film transistors and the micro light emitting diode array. These segments are manufactured separately using optimized processes for each component type, then transferred and bonded together. This segmentation enables process flexibility while managing manufacturing complexity through modular assembly.
Solution Approach 2:
The patent uses a transfer bonding process as an intermediary mechanism to connect the circuit substrate and micro light emitting diodes. This intermediary bonding layer or process enables the integration of separately manufactured components, providing process flexibility for design variations while managing the complexity of multi-step manufacturing through a standardized interface.
Data Source
AI summary
A micro light emitting diode panel, including a circuit substrate, multiple transistor elements, and multiple micro light emitting diodes, is provided. The circuit substrate includes multiple signal lines, multiple bonding pads, and multiple thin film transistors. The bonding pads extend from at least part of the signal lines. The transistor elements are electrically bonded to a part of the bonding pads and are electrically connected to the thin film transistors. The micro light emitting diodes are electrically bonded to another part of the bonding pads and are electrically connected to the thin film transistors. The thin film transistors each have a first semiconductor pattern. The transistor elements each have a second semiconductor pattern. An electron mobility difference between the first semiconductor pattern and the second semiconductor pattern is greater than 30 cm2/V·s. A method of fabricating the micro light emitting diode panel is also provided.