Micro LED Panel Transistor Transfer for High-Mobility Uniformity
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Solution Overview
Problem
The challenge in the micro LED display field is the difficulty in achieving uniformity of the poly-silicon film layer formed by excimer laser annealing, which affects the electrical properties of transistor devices, particularly their electron mobility, essential for high-resolution displays.
Innovation Solution
A semiconductor material substrate is developed with a carrier, a release layer, and an inorganic insulation layer, where the semiconductor material layer is bonded to the release layer through the inorganic insulation layer, enhancing electron mobility beyond 20 cm2/V·s, and a method of fabricating a micro LED panel involves transferring and bonding transistor devices onto a circuit substrate with improved electrical connections.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If poly-silicon thin film is formed by excimer laser annealing (ELA) process, then electron mobility is improved, but uniformity of the poly-silicon film layer becomes difficult to control
Solution Approach 1:
An inorganic insulation layer is introduced as an intermediary between the semiconductor material layer and the release layer. This intermediate layer serves as a buffer that improves the bonding interface while maintaining film uniformity, resolving the contradiction between achieving high electron mobility and controlling film layer uniformity during the ELA process
2Measurement precision
If micro LED display size and resolution are increased, then display performance is improved, but electron mobility requirements become more stringent
Solution Approach 1:
The patent changes the material parameters of the semiconductor layer by forming it through epitaxial growth on a carrier with a specific crystal orientation relationship. This parameter change achieves high electron mobility (>20 cm²/Vs) required for high-resolution displays while maintaining manufacturing feasibility
3Device complexity
If semiconductor material layer is bonded directly to release layer, then structure is simplified, but bonding strength and electrical properties are insufficient
Solution Approach 1:
The inorganic insulation layer acts as an intermediary bonding layer between the semiconductor material layer and the release layer. This intermediate structure enhances both the bonding strength and electrical properties without significantly increasing overall device complexity, as the layer can be formed through standard epitaxial processes
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach lowers production costs, increases design margin, and improves the electrical properties of micro LED panels, resulting in better image performance and cost advantages.
Implementation Method 1
The semiconductor material layer is bonded to the release layer through the inorganic insulation layer
Data Source
AI summary
A micro light emitting diode panel is provided. The micro light emitting diode panel includes a circuit substrate, a plurality of transistor devices and a plurality of micro light emitting diode devices. The transistor devices are bonded to the circuit substrate. Each of the transistor devices has a semiconductor pattern, a source electrode, a drain electrode and a gate electrode. The source electrode and the drain electrode are electrically connected to the semiconductor pattern. The source electrode, the drain electrode, and the gate electrode are located between the semiconductor pattern and the circuit substrate. The electron mobility of the semiconductor pattern is greater than 20 cm2/V·s. The micro light emitting diode devices are bonded to the circuit substrate, and are electrically connected to the transistor devices respectively.