Micro LED Light-Emitting Structure for Wavelength Uniformity
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Solution Overview
Problem
Conventional Micro LED display manufacturing methods result in uneven light-emitting wavelengths due to centrifugal forces during epitaxial growth, leading to variations in doping rates and display effects.
Innovation Solution
A light-emitting structure with a first region and a second region, where the second region surrounds the first, featuring larger first light-emitting units and sparser second light-emitting units, which improves the doping rate of light-emitting elements across both regions, making them more uniform.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Ease of manufacture
If uniform light-emitting units are used across the entire epitaxial wafer, then manufacturing process is simple, but light-emitting wavelength becomes uneven due to centrifugal forces during epitaxial growth
Solution Approach 1:
The patent divides the epitaxial wafer into a first region (central area) and a second region (peripheral area), where light-emitting units in the first region have a first area and light-emitting units in the second region have a second area that is smaller than the first area. This local differentiation compensates for the uneven doping rates caused by centrifugal forces during epitaxial growth, ensuring uniform light-emitting wavelengths across the entire wafer while maintaining a relatively simple manufacturing process.
2Manufacturing precision
If light-emitting units with different areas are used to compensate for doping rate variations, then light-emitting wavelength uniformity is improved, but device complexity increases
Solution Approach 1:
The patent implements local quality by creating two distinct regions with different light-emitting unit areas. The first region contains light-emitting units with a larger first area, while the second region contains light-emitting units with a smaller second area. This localized structural differentiation directly addresses the doping rate variations caused by centrifugal forces, achieving uniform light-emitting wavelengths without requiring complex additional components or processes.
3Area of stationary object
If multiple transfer processes are used in Micro LED manufacturing, then large-sized glass substrates can be populated, but yield decreases due to process complexity
Solution Approach 1:
The patent segments the epitaxial wafer into a first region and a second region with differently sized light-emitting units before transfer. This pre-segmentation allows for optimized packing arrangements on large-sized glass substrates, reducing the number of transfer operations required and minimizing yield loss associated with multiple transfer processes while still enabling population of large substrates.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach ensures equal doping rates across the light-emitting structure, reducing the difference in light-emitting wavelengths and enhancing the display effect by minimizing the impact of centrifugal forces during epitaxial growth.
Implementation Method 1
the active layer of the first light-emitting unit or the second light-emitting unit is a single quantum well of InGaN or AlGaN, or a plurality of quantum wells composed of InGaN/GaN or AlGaN/GaN, or a GaN-based material doped with indium element or aluminum element
Implementation Method 2
a LED epitaxial wafer is usually grown epitaxially on a substrate firstly
Data Source
AI summary
A light-emitting structure includes: a first region and a second region surrounding the first region. The first region includes a plurality of first light-emitting units, and the second region includes a plurality of second light-emitting units. An area of the first light-emitting unit is greater than an area of the second light-emitting unit. The area of the second light-emitting unit in the second region arranged on the edge is relatively small, which improves a doping rate of a light-emitting element in the second region, so that doping rates of the light-emitting element of the light-emitting structure in the first region and the second the area tend to be equal, thereby solving a problem of uneven light-emitting wavelengths in the first region and the second region when the light-emitting unit is prepared by epitaxy.