Micro-lens Structure for Image Sensor Quantum Efficiency

Resolve Bottlenecks,
Find Innovative Solutions
Generate Solutions

Solution Overview

Problem

CMOS image sensors face reduced quantum efficiency due to reflection of incident radiation off the flat top surface of passivation layers, leading to cross-talk between photodetectors and decreased absorption of light.

Innovation Solution

Incorporating micro-lenses with convex upper surfaces between protrusions on the substrate, which are etched at a higher rate than the passivation layer, to focus incident radiation towards the photodetectors, thereby reducing reflection and increasing absorption.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Ease of manufacture

If a flat top surface passivation layer is used, then manufacturing is simplified, but quantum efficiency is reduced due to reflection of incident radiation

Engineering Contradiction:
Improvepassivation layer structureVSAvoidquantum efficiency
Core Design Contradiction:
Ease of manufactureVSReliability

Solution Approach 1:

The patent applies curvature by forming micro-lenses with convex upper surfaces over the protrusions. These curved micro-lens surfaces refract and focus incident radiation onto the photodetectors, reducing reflection losses while maintaining the simplicity of the flat passivation layer manufacturing process.

Inventive Principle:
Principle #14Spheroidality (Curvature)

2Reliability

If micro-lenses are added to focus radiation, then quantum efficiency increases, but device complexity increases

Engineering Contradiction:
Improvequantum efficiencyVSAvoidlens structure
Core Design Contradiction:
ReliabilityVSDevice complexity

Solution Approach 1:

The patent merges the micro-lens structure with the existing protrusion formation process. The micro-lenses are formed as part of the same fabrication sequence that creates the protrusions, combining multiple functions into a unified structure that reduces overall device complexity despite adding optical focusing capability.

Inventive Principle:
Principle #5Merging (Combining)

Solution Approach 2:

The micro-lenses serve multiple functions: they focus incident radiation onto photodetectors, reduce reflection losses, and maintain compatibility with the existing protrusion structure. This multi-functionality increases quantum efficiency without requiring separate additional components.

Inventive Principle:
Principle #6Universality (Multi-functionality)

3Productivity

If etching rate of protrusions is increased, then micro-lens formation is improved, but manufacturing precision may be affected

Engineering Contradiction:
Improvemicro-lens formation efficiencyVSAvoidetching control
Core Design Contradiction:
ProductivityVSManufacturing precision

Solution Approach 1:

The patent applies local quality by using selective etching processes that target specific regions. The protrusions are etched at higher rates in localized areas where micro-lenses are formed, while maintaining precise control over the overall etching process to ensure manufacturing precision is not compromised.

Inventive Principle:
Principle #3Local quality

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

This configuration enhances quantum efficiency by directing more incident radiation towards the photodetectors, improving the overall performance of the image sensor.

Implementation Method 1

micro-lenses with convex upper surfaces... to focus incident radiation towards the photodetectors

Methodology Applied
Scientific EffectRefraction: Refraction

Implementation Method 2

micro-lenses... to focus incident radiation towards the photodetectors, thereby reducing reflection and increasing absorption

Methodology Applied
Scientific EffectFocusing: Focusing

Data Source

PatentUS20220262845A1Lens structure configured to increase quantum efficiency of image sensor
Publication Date: 2022.08.18 TAIWAN SEMICONDUCTOR MANUFACTURING CO LTD
  • US20220262845A1 patent drawing
  • US20220262845A1 patent drawing
  • US20220262845A1 patent drawing

AI summary

Various embodiments of the present disclosure are directed towards a method for forming an image sensor, the method includes forming a photodetector within a substrate. The substrate is etched to define a plurality of first protrusions over the photodetector. A first dielectric layer is deposited on the substrate. A second dielectric layer is deposited on the first dielectric layer. An etching process is performed on the first and second dielectric layers such that the first dielectric layer comprises a plurality of second protrusions different from the plurality of first protrusions. The first dielectric layer is etched more quickly than the second dielectric layer during the etching process.