Micro Semiconductor Optical Layer for Laser Transfer Light Shielding
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Solution Overview
Problem
The laser transfer technique for micro semiconductor devices is hindered by scattered light affecting chip characteristics and reliability due to the high-energy collimated light source, which impacts the epitaxial structure.
Innovation Solution
A micro semiconductor device with an optical layer comprising a multi-layer film structure, including a first film layer, a second film layer, and a third film layer, where the refractive indices of the first and second layers are greater than the third layer, and the thickness of the third layer is greater than the first and second layers, minimizing external light impact by enhancing reflectivity over self-luminescence.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Productivity
If laser transfer technique is used for mass transfer of micro semiconductor devices, then productivity is improved, but scattered light affects epitaxial structure causing reliability deterioration
Solution Approach 1:
The patent introduces an optical layer as an intermediary component between the external environment and the epitaxial structure. This optical layer includes a light-shielding film and a reflective film that work together to block and reflect scattered laser light, preventing it from reaching and damaging the epitaxial structure during laser transfer processes, thereby maintaining chip reliability while enabling mass transfer productivity
Solution Approach 2:
The patent applies preliminary protective measures by pre-forming the optical layer with light-shielding and reflective properties before the laser transfer process. This preliminary anti-action prevents scattered light from affecting the epitaxial structure in advance, ensuring that the high-energy laser can be used for efficient mass transfer without compromising device reliability
2Productivity
If high-energy collimated light source is focused on removing film layer, then material removal efficiency is improved, but light scatters into epitaxial structure causing harmful effects
Solution Approach 1:
The optical layer serves as a protective intermediary positioned between the laser light source and the epitaxial structure. The light-shielding film blocks direct light penetration, while the reflective film redirects scattered light away from the epitaxial structure, enabling high-energy laser use for efficient material removal without the harmful scattering effects
Solution Approach 2:
The patent converts the potentially harmful scattered light into a beneficial reflected light pattern. By using the reflective film, scattered light that would otherwise damage the epitaxial structure is redirected to follow the contour of the light-shielding film, effectively utilizing the scattered light for precise pattern definition while preventing damage
3Reliability
If optical layer with high reflectivity is added to protect epitaxial structure, then reliability is improved, but device complexity increases
Solution Approach 1:
The patent segments the protective optical function into distinct layers: a light-shielding film layer and a reflective film layer. This segmentation allows each layer to perform its specific function optimally while maintaining overall system reliability. The layered structure is systematically integrated into the existing semiconductor device architecture, managing complexity through functional decomposition
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This configuration ensures better structural reliability of the micro semiconductor device by reducing the impact of external light on the epitaxial structure, allowing for more precise laser transfer processes and improved material removal efficiency.
Implementation Method 1
A reflectivity of the optical layer to an external light of the micro semiconductor device is greater than a self-luminescence of the epitaxial structure of the micro semiconductor device
Implementation Method 2
The optical layer is a multi-layer film structure including a first film layer, a second film layer, and a third film layer disposed between the first film layer and the second film layer. A refractive index of the first film layer and a refractive index of the second film layer are both greater than a refractive index of the third film layer.
Data Source
AI summary
A micro semiconductor device includes an epitaxial structure and an optical layer. The optical layer is disposed on the epitaxial structure. The optical layer is a multi-layer film structure including a first film layer, a second film layer, and a third film layer disposed between the first film layer and the second film layer. A refractive index of the first film layer and a refractive index of the second film layer are both greater than a refractive index of the third film layer. A thickness of the third film layer is greater than a thickness of the first film layer and s thickness of the second film layer. A reflectivity of the optical layer to an external light of the micro semiconductor device is greater than a self-luminescence of the epitaxial structure of the micro semiconductor device.