Micro-pattern forming via block copolymer self-assembly
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Solution Overview
Problem
Current micro-pattern forming methods for semiconductor devices are complex and costly, particularly due to the limitations of photolithography, which makes it difficult to achieve precise micro-patterns at a low cost and with high efficiency.
Innovation Solution
A method involving the formation of a mold layer and a supporting material layer on a substrate, followed by patterning, phase-separation of a block copolymer layer, and selective removal of block parts to expose the mold layer, allowing for the creation of micro-patterns without the need for additional photolithography processes, enabling the manufacturing of capacitors and semiconductor devices with high aspect ratios at a lower cost.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If photolithography process is used to form micro-pattern, then manufacturing precision can be improved, but device complexity and cost increase
Solution Approach 1:
The patent segments the pattern formation process into two distinct stages: first forming a preliminary pattern through photolithography, then using block copolymer self-assembly to further subdivide and refine the pattern. This segmentation allows achieving higher precision without proportionally increasing the complexity of each individual step, as the block copolymer process automatically performs the fine patterning through its phase separation mechanism.
Solution Approach 2:
The block copolymer layer serves as an intermediary material that bridges the preliminary photolithography pattern and the final micro-pattern. The polymer's phase-separated domains act as a self-organizing intermediary structure that automatically refines the pattern at the nanoscale, eliminating the need for additional complex photolithography steps while maintaining high precision.
2Manufacturing precision
If photolithography process is used to form micro-pattern, then manufacturing precision can be improved, but manufacturing cost increases
Solution Approach 1:
The block copolymer system performs self-service by automatically self-assembling into the desired micro-pattern through its inherent phase separation behavior. This self-organizing process eliminates the need for expensive additional photolithography equipment and processing steps, achieving high precision patterning through the material's own properties rather than requiring costly external intervention.
Solution Approach 2:
The patent exploits the phase transition behavior of block copolymers during self-assembly, where the polymer transitions from a mixed state to a phase-separated state with well-defined domains. This phase transition automatically creates the desired micro-pattern at the nanoscale, providing a cost-effective alternative to additional photolithography processes while maintaining high manufacturing precision.
3Manufacturing precision
If additional photolithography process is performed to achieve smaller micro-pattern, then manufacturing precision is improved, but productivity decreases
Solution Approach 1:
The block copolymer self-assembly process operates continuously once initiated, with the polymer chains automatically organizing into the final pattern without requiring interruption for additional photolithography steps. This continuous self-organizing action maintains high productivity while achieving the desired small feature sizes, as the process proceeds automatically through phase separation rather than requiring multiple discrete manufacturing steps.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach simplifies the micro-pattern forming process, reduces costs, and allows for the precise formation of micro-patterns and semiconductor devices with high aspect ratios, improving manufacturing efficiency and reducing defects in micro-electronic systems.
Implementation Method 1
processing the block copolymer layer to phase-separate the block copolymer layer into a plurality of block parts
Data Source
AI summary
A method of forming a micro-pattern including forming a mold layer and a supporting material layer on a substrate, patterning the mold layer and the supporting material layer to form recess patterns, forming conductor patterns in the recess patterns, removing a portion of an upper portion of the supporting material layer for causing upper portions of the conductor patterns to protrude, forming a block copolymer layer on the supporting material layer, processing the block copolymer layer to phase-separate the block copolymer layer into a plurality of block parts, selectively removing some of the phase-separated plurality of block parts, and removing the supporting material layer to expose the mold layer at a position corresponding to each of the removed block parts may be provided.