Micro Semiconductor Device Asymmetric Support for High Density Transfer
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Solution Overview
Problem
The challenge in micro semiconductor devices is the limited integration density due to the need for a supporting structure on both sides, which restricts the dense arrangement of micro devices on temporary carriers and complicates their transfer to receiving substrates, potentially damaging the devices during the process.
Innovation Solution
A micro semiconductor structure with a supporting layer disposed on the top surface of a substrate, featuring an upper portion and a bottom portion with specific length ratios, allowing the micro devices to be spaced apart and securely transferred without damaging them, while enabling a higher density of devices on the temporary carrier.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If a supporting structure is disposed on both sides of micro devices, then the micro devices can be fixed on a temporary carrier for transfer, but the integration density of micro devices is reduced
Solution Approach 1:
The patent extracts the supporting structure from the conventional configuration and repositions it to only one side (right side) of the micro device. This extraction of the left-side support eliminates the space occupation that previously reduced integration density, while the remaining right-side support maintains the necessary fixing stability for device transfer.
Solution Approach 2:
The patent implements an asymmetric supporting structure configuration where support is provided only on the right side of the micro device rather than symmetrically on both sides. This asymmetric arrangement optimizes space utilization on the temporary carrier, enabling higher integration density while preserving the essential mechanical support function through the unilateral support structure.
2Quantity of substance
If micro devices are densely arranged on the temporary carrier, then integration density increases, but the transfer process becomes more complex and may damage devices
Solution Approach 1:
By extracting the unnecessary left-side supporting structure, the patent simplifies the overall system configuration. This reduction in structural complexity directly translates to a simpler transfer process, as fewer support elements need to be managed during device handling, thereby reducing the risk of device damage while maintaining high integration density.
Solution Approach 2:
The patent applies local quality by providing support only where absolutely necessary (on the right side of the device) rather than uniformly on both sides. This localized support approach minimizes the complexity of the transfer process by reducing the number of support elements that need to be coordinated, while still ensuring adequate mechanical stability for safe device transfer.
3Ease of operation
If a supporting structure is used for transferring micro devices, then device transfer is facilitated, but the structure occupies space that could be used for more devices
Solution Approach 1:
The patent extracts the redundant left-side support structure, thereby recovering the previously occupied space on the temporary carrier. This extracted space can now be utilized for accommodating additional micro devices, increasing the effective area utilization while the remaining right-side support continues to facilitate device transfer operations.
Solution Approach 2:
By implementing asymmetric support placement (only on the right side), the patent optimizes the distribution of support structures to minimize space occupation. This asymmetric configuration reduces the total area consumed by supporting structures, freeing up more carrier area for device placement while maintaining the transfer facilitation function through the strategically positioned unilateral support.
Data Source
AI summary
A micro semiconductor device and a micro semiconductor display are provided. The micro semiconductor device includes an epitaxial structure, a first electrode, a second electrode and a supporting layer. The epitaxial structure has a bottom surface and a top surface, wherein the bottom surface is defined as a central region and a peripheral region. A first electrode and a second electrode are disposed on the central region of the bottom surface of the epitaxial structure, or the first electrode is disposed on the central region of the bottom surface of the epitaxial structure and the second electrode is disposed on the top surface of the epitaxial structure. The supporting layer is disposed on the peripheral region of the bottom surface of the epitaxial structure.