Micro-Structure Arrays for 3D IC Package Hot Spot Cooling
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Solution Overview
Problem
3D IC packaging faces challenges in providing effective cooling for stacked dies due to thermal resistance from structural silicon and dielectric bonding interfaces, which inhibit the efficient dissipation of heat from hot spots.
Innovation Solution
Integration of micro-sized arrays of heat-conducting features, such as pillars made of materials like copper, into structural silicon members, hybrid bonding interfaces, and top IC dies to enhance thermal conductivity and facilitate heat dissipation.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Productivity
If 3D IC packaging is used to achieve tighter integration, then integration density is improved, but thermal dissipation capability deteriorates due to thermal resistance from structural silicon and dielectric bonding interfaces
Solution Approach 1:
The patent segments the thermal management system into multiple independent heat extraction pathways: (1) heat conduction paths through thermal vias in the structural silicon substrate, (2) heat spreading paths through thermally conductive dielectric layers, and (3) heat dissipation paths through heat sinks or heat spreaders on the package surface. This segmentation allows heat to be removed through multiple parallel channels, overcoming the thermal resistance of individual layers while maintaining the 3D stacked architecture for high integration density.
Solution Approach 2:
The patent introduces thermal interface materials and thermally conductive dielectric layers as intermediary elements between the IC dies and the external environment. These intermediary layers with high thermal conductivity serve as heat transfer bridges, reducing thermal resistance at critical interfaces while allowing the 3D stacking architecture to be maintained for improved integration density.
2Volume of moving object
If multiple IC chips are stacked in 3D packaging, then space utilization is improved, but heat removal difficulty increases due to thermal resistance from bonding interfaces
Solution Approach 1:
The patent transitions from traditional 2D planar heat dissipation to 3D vertical heat management. Thermal vias are formed vertically through the structural silicon substrate, and thermally conductive dielectric layers are positioned between stacked dies to conduct heat in the vertical dimension. This dimensional transition enables efficient heat removal from multiple stacked chips by providing direct thermal pathways through the bonding interfaces, thereby improving heat removal capability while maintaining high space utilization through 3D stacking.
Solution Approach 2:
The patent applies local quality enhancement by positioning thermally conductive dielectric layers and thermal vias specifically at locations corresponding to heat-generating regions of the IC dies. Rather than uniformly distributing thermal management features throughout the entire package, the solution concentrates thermal conductivity enhancements at critical hot spots and bonding interfaces, thereby improving heat removal efficiency from specific high-heat areas while maintaining the compact 3D stacked architecture.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The micro-arrays effectively conduct heat away from local hot spots, improving cooling efficiency in 3D stacked die packages while utilizing existing manufacturing tools and techniques.
Implementation Method 1
micro-sized arrays of features comprised of a material or materials with good thermal conductivity
Data Source
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AI summary
An apparatus comprises a first integrated circuit (IC) die comprising a first surface and a second IC die laterally adjacent to the first IC die comprising a second surface. A structural member over an entirety of the first and second IC dies includes a first side facing the first and second surfaces, a second side opposite the first side, and one or more passive features. The apparatus also comprises a layer of dielectric material contacting the first side and both of the first and second surfaces. The layer may comprise a plurality of first metal features extending between the first side and the first surface, where at least one of the metal features contacts one of the passive features. The structural member may comprise a plurality of second metal features extending between the first and second sides. The passive features may comprise silicon or the second metal features.