Micro Semiconductor Transfer Structure for High-Yield Mass Bonding
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Solution Overview
Problem
Conventional methods for transferring micro semiconductor elements face challenges in achieving a satisfactory success rate due to the use of high-precision positioning techniques and the undesired sacrifice of epitaxial structures during transfer, particularly in direct and indirect transfer processes.
Innovation Solution
A method involving a transfer substrate with a photosensitive layer that is partially cured to adhere to micro semiconductor elements, forming connecting structures that interconnect the elements to the substrate, allowing for mass transfer without high-precision positioning, and using a eutectic process to bond metallic support members for stable separation.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Productivity
If direct transfer method is used to bond micro semiconductor elements to receiver substrate, then transfer efficiency is improved, but epitaxial structure is undesirably sacrificed
Solution Approach 1:
The invention separates the micro semiconductor element into distinct functional parts: the active epitaxial structure (kept intact on the element) and the connecting structure (which can be sacrificial). This allows the epitaxial structure to be preserved while the connecting structure is removed after transfer, resolving the contradiction between efficient transfer and structure preservation.
Solution Approach 2:
The connecting structure acts as an intermediary component that enables bonding during transfer but is designed to be removable. It mediates between the need for strong bonding during transfer and the need to preserve the epitaxial structure, allowing the transfer process to be efficient while the epitaxial structure remains intact.
2Manufacturing precision
If high-precision positioning technique is used to achieve satisfactory transfer success rate, then transfer precision is improved, but process complexity is increased
Solution Approach 1:
The connecting structure is designed with self-aligning features that enable automatic positioning during transfer. The structure itself provides the positioning function through its geometric design and bonding characteristics, eliminating the need for complex external positioning systems while maintaining high transfer success rates.
Solution Approach 2:
The invention changes the bonding parameters of the connecting structure to enable easy alignment and bonding. By adjusting the bonding strength, geometry, and material properties of the connecting structure, the system achieves high transfer precision through simplified processes rather than complex positioning techniques.
3Ease of manufacture
If conventional transfer methods are used, then transfer capability is achieved, but transfer success rate is insufficient
Solution Approach 1:
The connecting structure is pre-formed with specific geometric and material characteristics that ensure successful transfer. The structure is designed in advance with optimized bonding surfaces, dimensions, and material properties that guarantee reliable transfer outcomes, eliminating the need for complex real-time adjustments during the transfer process.
Solution Approach 2:
The connecting structure uses composite material design combining different materials with complementary properties: one material provides strong bonding to the micro semiconductor element while another provides controlled bonding to the receiver substrate. This composite approach enables reliable transfer by optimizing the bonding characteristics at each interface.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The method enhances the success rate of micro semiconductor element transfer by simplifying the process and reducing costs through the use of a photosensitive layer and eutectic bonding, ensuring secure interconnection and stable separation.
Implementation Method 1
a photosensitive layer that is partially cured to adhere to micro semiconductor elements
Implementation Method 2
using a eutectic process to bond metallic support members for stable separation
Data Source
AI summary
A semiconductor device includes a transfer substrate, an array of connecting structures, and an array of micro semiconductor elements. Each of the micro semiconductor elements has a semiconductor layered unit and at least one electrode. Each of the connecting structures interconnects a respective one of the micro semiconductor elements and the transfer substrate. In each of the micro semiconductor elements, the electrode is disposed on the semiconductor layered unit opposite to a respective one of the connecting structures. A width of at least a part of each of the connecting structures is smaller than a width of a connecting surface of the semiconductor layered unit of the respective one of the micro semiconductor elements. The connecting surface of the semiconductor layered unit of each of the micro semiconductor elements is connected to the respective one of the connecting structures.