Micro-volume Deposition Chamber for ALD Throughput
Find Innovative SolutionsGenerate Solutions
Solution Overview
Problem
Current atomic layer deposition (ALD) processes are limited by slow cycling times due to the need for precise control and purging between precursors, which hampers high throughput in semiconductor processing.
Innovation Solution
The design of a processing chamber with a movable substrate support, inner and outer baffle rings, and a gas distribution system that allows for rapid purging and precursor switching using closely coupled fast actuation diaphragm valves, minimizing process volume and enabling cross-flow gas distribution for efficient precursor utilization and operation at higher pressures or lower temperatures.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If traditional ALD process with purging between precursors is used, then uniform layer deposition is achieved, but cycling time is slow and throughput is limited
Solution Approach 1:
The substrate support is made movable between two positions: a first position during precursor exposure and a second position during purging. This dynamic repositioning allows the chamber to maintain precise layer control during deposition while enabling faster purging operations, thereby improving throughput without sacrificing layer uniformity
Solution Approach 2:
The deposition chamber is segmented into two functional zones by the movable substrate support: a deposition zone where precursors are introduced and a purging zone where rapid gas flow removes excess precursors. This spatial segmentation allows simultaneous optimization of both deposition precision and purging speed
2Productivity
If process volume is reduced for faster cycling, then throughput improves, but precursor distribution and uniformity become more difficult to control
Solution Approach 1:
A gas distribution system with multiple gas inlets and outlets is implemented to create controlled fluid flow patterns within the reduced process volume. The gas flow dynamics are engineered to ensure uniform precursor distribution across the substrate surface even in the compact chamber configuration, enabling fast cycling without compromising deposition uniformity
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This configuration enhances the efficiency of ALD processes by reducing process volume, allowing for faster cycling and more productive use of precursors, particularly with high-cost or reactive materials, while maintaining uniformity and control in layer deposition.
Implementation Method 1
The inner baffle ring comprises a plurality of openings and is positioned between the lower surface of the lid and the upper surface of the substrate support
Implementation Method 2
The substrate support is movable so that the upper surface can be moved closer to or further from the lower surface of the lid
Implementation Method 3
The sidewall has a vacuum plenum and an opening forming fluid connection between the vacuum plenum and an interior of the processing chamber
Data Source
AI summary
Processing chambers having a lid with a lower surface, a substrate support with an upper surface facing the lid and an inner baffle ring between the substrate support and the lid are described. Methods of using the processing chamber are described.