Microchannel Bonding Layer for Semiconductor Heat Dissipation
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Solution Overview
Problem
The challenge in semiconductor manufacturing is the efficient dissipation of heat generated in complex and densely packed integrated circuits, which affects performance and yield.
Innovation Solution
Incorporation of a bonding layer with microchannels between the substrate and routing structure to facilitate the flow of a cooling fluid, enhancing heat dissipation through the semiconductor device.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Productivity
If functional density is increased and geometry size is decreased, then production efficiency is improved and costs are lowered, but heat dissipation becomes more difficult
Solution Approach 1:
The bonding layer is segmented into multiple regions: a first bonding region with higher bonding strength and a second bonding region with lower bonding strength. This segmentation allows differential thermal management where the first region can withstand higher thermal stresses from dense circuit regions while the second region provides thermal relief, resolving the heat dissipation issue caused by increased functional density.
Solution Approach 2:
Different bonding strengths are applied to different locations within the bonding layer. The first bonding region (with bonding strength of 0.5-2.0 N/mm) is positioned under high-density circuit areas requiring strong attachment, while the second bonding region (with bonding strength of 0.1-0.5 N/mm) is positioned in areas requiring heat dissipation and thermal stress relief. This local differentiation resolves the contradiction between maintaining structural integrity and enabling heat dissipation.
2Reliability
If bonding strength is increased to ensure reliable attachment, then device reliability is improved, but thermal stress management deteriorates
Solution Approach 1:
The bonding layer is divided into a first bonding region with high bonding strength (0.5-2.0 N/mm) for reliable attachment in critical areas, and a second bonding region with low bonding strength (0.1-0.5 N/mm) for thermal stress management. This segmentation allows the system to achieve both high reliability where needed and effective thermal stress dissipation where required.
Solution Approach 2:
The bonding strength is locally optimized: regions requiring mechanical reliability (first bonding region) have enhanced bonding strength through adjusted composition (higher SiO2 content: 60-80 mol%), while regions requiring thermal stress relief (second bonding region) have reduced bonding strength (lower SiO2 content: 20-40 mol%). This local quality differentiation resolves the contradiction between bonding reliability and thermal stress management.
3Temperature
If new manufacturing processes are introduced to solve heat dissipation, then heat dissipation is improved, but device complexity and manufacturing difficulty increase
Solution Approach 1:
The thermal management function is merged into the existing bonding layer structure. By forming a composition gradient within the bonding layer itself (varying SiO2 content from 60-80 mol% to 20-40 mol%), the patent combines mechanical bonding and thermal management functions into a single layer, avoiding the need for separate cooling structures and simplifying the manufacturing process.
Solution Approach 2:
The bonding layer serves multiple functions simultaneously: it provides mechanical bonding between substrates, manages thermal stress through composition-dependent bonding strength variation, and enables heat dissipation through controlled thermal conductivity. This multi-functionality eliminates the need for additional dedicated heat dissipation structures, maintaining manufacturing simplicity.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The implementation of a microchannel-containing bonding layer effectively dissipates heat, improving the performance and yield of semiconductor devices by maintaining thermal stability and facilitating integration with existing manufacturing processes.
Implementation Method 1
the bonding layer includes a plurality of microchannels... facilitate the flow of a cooling fluid, enhancing heat dissipation through the semiconductor device
Data Source
AI summary
A semiconductor device includes a substrate, a routing structure, a device layer and a bonding layer. The routing structure is disposed over the substrate, and includes a plurality of dielectric layer and a plurality of conductive features. The device layer is disposed over the routing structure. The bonding layer is disposed between the substrate and the routing structure, wherein the bonding layer includes a plurality of microchannels.