Buried Microchannel Diameter Control via Oxidation
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Solution Overview
Problem
Existing methods for forming microchannels with diameters below and parallel to a surface lack precision control and are limited in achieving diameters smaller than 1 mm, particularly in bonding vertically etched wafers.
Innovation Solution
The use of silicon migration technology to create microchannels beneath a silicon surface, followed by etching and oxidation processes to control the diameter, allowing for precise adjustment of the microchannel dimensions.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If traditional methods (molding, folding, bonding vertically etched wafers) are used to form microchannels, then microchannels can be manufactured, but the diameter cannot be controlled with precision and cannot achieve diameters smaller than 1 mm
Solution Approach 1:
The patent applies preliminary action by first forming a patterned structure with larger dimensions, then using oxidation to progressively reduce the diameter to the desired precise size. The initial pattern is created with etching and annealing, and subsequent oxidation steps carefully control the diameter reduction, allowing precise final dimensions to be achieved through this staged approach rather than attempting to create the final small diameter directly.
Solution Approach 2:
The patent utilizes parameter changes by controlling oxidation time, temperature, and atmosphere to precisely adjust the microchannel diameter. By varying these oxidation parameters, the diameter can be controlled with high precision down to sub-millimeter scales, overcoming the limitation of traditional methods that cannot achieve such precise dimensional control.
2Manufacturing precision
If silicon migration technology is used to create buried microchannels, then microchannels can be formed beneath the surface, but the diameter cannot be precisely controlled
Solution Approach 1:
The patent uses silicon migration technology as a preliminary action to create the buried microchannel structure with an initial diameter, then applies oxidation as a subsequent refining step to achieve precise diameter control. This two-stage approach combines the burial capability of silicon migration with the precision control of oxidation, resolving the contradiction between ease of creating buried channels and precision of diameter control.
Solution Approach 2:
The oxidation process acts as an intermediary between the silicon migration step and the final microchannel structure. The oxidation layer serves as a mediator that progressively reduces the diameter from the initial migration-formed size to the precise target dimension, enabling both buried channel formation and precise diameter control.
3Manufacturing precision
If oxidation process is applied to control microchannel diameter, then precise diameter control is achieved, but additional process steps are required
Solution Approach 1:
The patent employs oxidation with carefully controlled parameters (time, temperature, atmosphere) to achieve precise diameter control. By optimizing these parameters, the process achieves high precision while minimizing the number of required steps. The oxidation can be performed in a single or few staged treatments rather than multiple separate processes, balancing precision with process simplicity.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
Enables the formation of microchannels with controllable diameters of 1 mm or less, buried beneath the surface, suitable for various applications such as biomedical and thermal engineering.
Implementation Method 1
Silicon migration technology is utilized to obtain a microchannel that is buried beneath a silicon surface
Implementation Method 2
The pattern is then oxidized to facilitate control of the diameter of the microchannel
Implementation Method 3
Subsequent etching opens the two endings of the microchannel
Data Source
AI summary
Described herein is a microchannel that is formed beneath and parallel to a surface of a silicon substrate. Silicon migration technology is utilized to form a microchannel that is buried beneath the surface of the silicon substrate. Etching opens at least one end of the microchannel. Oxidization is utilized through the open end of the microchannel to facilitate a controlled diameter of the microchannel.