Micro-channel Device with Semiconductor Junction Integration
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Solution Overview
Problem
Conventional methods for fabricating micro-channel structures are complex, expensive, and inefficient, with difficulties in producing high-resolution or ultra-high-resolution micro-channels due to processes like electron beam lithography and laser interference etching, resulting in high manufacturing costs and low scalability.
Innovation Solution
A micro-channel device is created using a semiconductor junction with a base layer, rails, and a cover layer of columns, where the cover layer and base layer form micro-channels, eliminating the need for bonding processes and enhancing alignment, allowing for integration and simplified manufacturing with materials like transparent conductive materials.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If conventional methods like electron beam lithography and laser interference etching are used to fabricate micro-channel structures, then high-resolution micro-channels can be produced, but the manufacturing process becomes complex and expensive with low scalability
Solution Approach 1:
The patent merges the micro-channel structure fabrication with semiconductor junction fabrication into a single integrated process. The micro-channel structure includes a base layer, rails, and cover layer with columns that are formed simultaneously with the P-type, intrinsic, and N-type semiconductor layers through standard semiconductor manufacturing techniques, eliminating the need for separate complex lithography and etching processes.
Solution Approach 2:
The semiconductor manufacturing process is made multi-functional by simultaneously creating both the semiconductor junction and the micro-channel structure. The same deposition and patterning processes that create the semiconductor layers also create the micro-channel geometry, allowing a single process line to produce both functional components.
2Manufacturing precision
If conventional methods like electron beam lithography and laser interference etching are used to fabricate micro-channel structures, then high-resolution micro-channels can be produced, but manufacturing costs increase and scalability decreases
Solution Approach 1:
The patent merges the micro-channel structure fabrication with semiconductor junction fabrication into a single integrated process. The micro-channel structure includes a base layer, rails, and cover layer with columns that are formed simultaneously with the P-type, intrinsic, and N-type semiconductor layers through standard semiconductor manufacturing techniques, eliminating the need for separate complex lithography and etching processes.
Solution Approach 2:
The patent changes the manufacturing parameters from specialized high-resolution techniques (electron beam lithography, laser interference etching) to standard semiconductor fabrication parameters (photolithography, sputtering, CVD). This parameter change enables the use of high-volume, low-cost manufacturing processes while maintaining the required micro-channel resolution through the precise control of layer thicknesses and patterning dimensions.
3Strength
If bonding processes are used to assemble micro-channel structures, then structural integrity can be achieved, but alignment precision decreases and manufacturing complexity increases
Solution Approach 1:
The patent merges the micro-channel structure fabrication with semiconductor junction fabrication into a single integrated process. The micro-channel structure includes a base layer, rails, and cover layer with columns that are formed simultaneously with the P-type, intrinsic, and N-type semiconductor layers through standard semiconductor manufacturing techniques, eliminating the need for separate complex lithography and etching processes.
Data Source
AI summary
The present disclosure relates to a micro-channel device. The micro-channel device may include a micro-channel structure and a semiconductor junction. The micro-channel structure may include a base layer, a plurality of rails distributed on the base layer at intervals, and a cover layer comprising a plurality of columns. The cover layer and the base layer are configured to form a plurality of micro-channels. The semiconductor junction may include a P-type semiconductor layer, an intrinsic semiconductor layer and a N-type semiconductor layer stacked in a first direction.


