Microelectronic Assemblies With Thermal Layer Conductive Pathways
Find Innovative SolutionsGenerate Solutions
Solution Overview
Problem
Current techniques for coupling integrated circuit devices are limited by manufacturing constraints, device size, thermal considerations, and interconnect congestion, which impact costs and implementations, particularly in achieving reliable attachment of multiple IC dies with improved power efficiency, bandwidth, and design flexibility.
Innovation Solution
A microelectronic assembly that includes a die with conductive contacts on one side and a thermal layer with conductive pathways on the other, where the thermal layer is attached to the die using techniques like direct bonding or hybrid bonding, allowing for efficient power delivery, thermal dissipation, and high-density interconnects between multiple dies.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Volume of moving object
If current techniques for coupling integrated circuit devices are used, then manufacturing processes are simpler, but device size increases, thermal dissipation worsens, and interconnect congestion increases
Solution Approach 1:
The patent transitions from planar interconnection to three-dimensional vertical stacking of multiple IC dies. By utilizing the vertical dimension with through-silicon vias (TSVs) and microbumps, the design achieves high-density interconnects without increasing lateral package footprint, thereby reducing overall package size while improving thermal dissipation through vertical heat pathways.
Solution Approach 2:
The patent divides a single large IC die into multiple smaller dies stacked vertically. Each die can be independently manufactured and tested, improving yield and reducing the lateral dimensions required. The segmentation enables better thermal management by distributing heat sources across multiple smaller components with improved heat dissipation pathways.
2Reliability
If multiple IC dies are coupled using conventional methods, then manufacturing is more established, but attachment reliability decreases, power efficiency worsens, and bandwidth is limited
Solution Approach 1:
The patent replaces conventional mechanical wire bonding with direct mechanical bonding techniques including microbumps and through-silicon vias. This substitution provides more reliable electrical and mechanical connections with lower profile, enabling vertical stacking while improving attachment reliability and power efficiency through direct metallurgical bonds.
Solution Approach 2:
The patent changes the bonding parameters from conventional wire bonding to direct bonding with microbumps and TSVs. This parameter change enables smaller connection sizes, lower resistance paths for improved power efficiency, and higher density interconnects for increased bandwidth while maintaining manufacturing feasibility.
3Speed
If traditional interconnection methods are used, then manufacturing costs are lower, but interconnect congestion increases and signal speed decreases
Solution Approach 1:
The patent utilizes vertical three-dimensional interconnection through TSVs and microbumps instead of lateral planar routing. This dimensional change provides dedicated vertical signal pathways that reduce interconnect congestion, shorten signal paths for faster transmission, and enable higher bandwidth without proportionally increasing manufacturing complexity.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach enables reliable attachment of multiple IC dies at lower costs, with improved power delivery, thermal dissipation, and signal speed, while reducing package size, making it suitable for small and low-profile applications such as computers, tablets, and consumer electronics.
Implementation Method 1
a thermal layer attached to the back side of the die, the thermal layer comprising a second material and a conductive pathway, wherein the conductive pathway extends from a front side of the thermal layer to a back side of the thermal layer
Implementation Method 2
the die comprising a first material and conductive contacts at the front side
Data Source
AI summary
Microelectronic assemblies, and related devices and methods, are disclosed herein. For example, in some embodiments, a microelectronic assembly may include a die having a front side and a back side, the die comprising a first material and conductive contacts at the front side; and a thermal layer attached to the back side of the die, the thermal layer comprising a second material and a conductive pathway, wherein the conductive pathway extends from a front side of the thermal layer to a back side of the thermal layer.