Microelectronic Cleaning Composition for Residue Removal Without Corrosion
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Solution Overview
Problem
Existing cleaning solutions for microelectronic device substrates are ineffective in removing residues while preventing corrosion of metals like cobalt, copper, molybdenum, and tungsten, as well as dielectric materials, without causing damage to these features.
Innovation Solution
Aqueous cleaning compositions comprising water, a complexing agent, and an amino(C6-C12 alkyl)alcohol, devoid of corrosion inhibitors such as guanidine, pyrazolone, or hydroxyquinoline compounds, are used to remove residues while protecting these materials.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If conventional cleaning solutions are used to remove residues from microelectronic device substrates, then cleaning effectiveness is improved, but corrosion damage to metals (cobalt, copper, molybdenum, tungsten) and dielectric materials occurs
Solution Approach 1:
The patent changes the chemical parameters of the cleaning solution by specifying precise pH ranges (pH 9-11) and using specific corrosion inhibitor compounds (benzotriazole, tolyltriazole, phenylmercaptoimidazole) to achieve effective cleaning while preventing corrosion of copper, cobalt, molybdenum, tungsten, and dielectric materials
Solution Approach 2:
The cleaning solution uses a composite formulation combining multiple corrosion inhibitor compounds (benzotriazole, tolyltriazole, phenylmercaptoimidazole) with specific surfactants and chelating agents to provide broad-spectrum protection against corrosion while maintaining cleaning effectiveness on various metal and dielectric surfaces
2Reliability
If copper is used as interconnect material to improve conductivity and electromigration resistance, then electrical performance is improved, but adhesion to dielectric materials deteriorates and copper ion diffusion into dielectrics occurs
Solution Approach 1:
The patent introduces a barrier layer as an intermediary between the copper interconnect and dielectric material. This barrier layer prevents copper ion diffusion into the dielectric and maintains adhesion strength, allowing copper to provide its superior electrical conductivity and electromigration resistance without the negative effects of direct copper-dielectric contact
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The compositions effectively remove residues from microelectronic device substrates without causing corrosion to metals and dielectric materials, ensuring high reliability and performance of the integrated circuits.
Implementation Method 1
a complexing agent
Implementation Method 2
controlled interactions of chemical materials, such as oxidation, reduction, or chelation of a material that is present at or removed from the surface
Implementation Method 3
inhibiting damage (i.e., corrosion) to certain metal features such as cobalt, copper, molybdenum, and tungsten
Data Source
AI summary
A composition for cleaning a microelectronic device substrate is provided. The composition is useful for cleaning in-process microelectronic device substrates possessing exposed cobalt, molybdenum, copper, molybdenum, tungsten, and dielectric surfaces. Also provided is a method for cleaning such devices and a kit comprising one or more of the components of the composition.