Microelectronic Component Void Prevention via Ion Implantation
Find Innovative SolutionsGenerate Solutions
Solution Overview
Problem
Current manufacturing techniques for microelectronic components, particularly CMOS components, face issues with residual voids in electrically-insulating areas between transistors, leading to short-circuits and reduced transistor density due to the aspect ratio of cavities and the consumption of dielectric material during stress film deposition.
Innovation Solution
A method involving isotropic light-ion implantation and plasma application to modify and selectively etch the protective coating, forming a silicon oxide film that preferentially covers horizontal surfaces, reducing the aspect ratio of cavities and preventing voids by gradually removing the protective coating, thereby improving the filling of spaces between transistors.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If stress films are deposited to increase transistor performance, then field-effect transistor performance is improved, but filling defects and short-circuits occur due to consumption of dielectric material in cavity areas
Solution Approach 1:
The patent applies preliminary action by performing light-ion implantation and plasma treatment on the protective coating before stress film deposition. This modifies the protective coating surface to prevent dielectric material consumption during subsequent stress film deposition, thereby preventing filling defects and short-circuits while maintaining transistor performance enhancement
Solution Approach 2:
The protective coating serves as an intermediary layer between the dielectric material and the stress film deposition process. By modifying this intermediary layer through ion implantation and plasma treatment, the patent prevents harmful interactions during stress film deposition that would otherwise cause material consumption and short-circuits
2Manufacturing precision
If the protective coating is completely removed to improve filling, then void prevention is enhanced, but adjacent materials may be damaged
Solution Approach 1:
The patent applies local quality by selectively modifying only the protective coating layer through light-ion implantation and plasma treatment, leaving the underlying dielectric material and adjacent structures intact. This localized modification achieves improved filling quality without damaging adjacent materials
Solution Approach 2:
The patent changes the physical and chemical parameters of the protective coating through light-ion implantation and plasma treatment. These parameter changes make the protective coating more susceptible to selective removal or modification without affecting adjacent materials, thereby improving filling quality while preventing damage
3Productivity
If transistor density is increased, then productivity is improved, but the aspect ratio of cavities increases leading to more voids
Solution Approach 1:
The patent performs preliminary light-ion implantation and plasma treatment on the protective coating before high-density transistor fabrication. This preliminary modification prevents void formation during subsequent processing even when transistor density is increased, allowing higher productivity without compromising manufacturing precision
4Strength
If the protective coating is preserved to protect structures, then structural integrity is maintained, but voids form during stress film deposition
Solution Approach 1:
The patent applies preliminary light-ion implantation and plasma treatment to modify the protective coating before stress film deposition. This creates a modified protective coating that maintains structural integrity while preventing void formation during stress film deposition
Solution Approach 2:
The patent changes the parameters of the protective coating through ion implantation and plasma treatment, making it more resistant to void formation during stress film deposition while preserving its protective function and structural integrity
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This method reduces the risk of voids and enhances the reliability of transistor manufacturing by widening the space between transistors, allowing for more precise and complete removal of the protective coating without damaging adjacent materials, thus improving the deposition of mechanically stressing layers and preventing short-circuits.
Implementation Method 1
an isotropic light-ion implantation configured so as to form modified superficial parts in the thickness, respectively, of the contact module, of the protective coating and of the base portion of the cavity
Implementation Method 2
an application of a plasma comprising at least one mixture of gaseous components, the application of a plasma being configured so as to: etch the modified superficial part of the protective coating
Implementation Method 3
form a silicon oxide-based film on the exposed surfaces, respectively, of the contact module, of the cavity and of the protective coating
Data Source
AI summary
A method for producing a component is provided, a base of which is formed by transistors on a substrate, including: forming a gate area, spacers, and a protective coating partly covering the spacers and a sidewall portion of a cavity without covering a top face of the gate area and a base portion of the cavity; forming a contact module, the gate located in beneath the module; and removing part of the coating with an isotropic light-ion implantation to form modified superficial parts in a thickness, respectively, of the contact module, of the coating, and of the base portion, and with an application of a plasma to: etch the modified superficial parts to only preserve, in the coating, a residual part of the coating, and to form a silicon oxide-based film on exposed surfaces, respectively, of the contact module, of the cavity, and of the coating.