Semiconductor Microfluidic Channel Structure Using Epitaxial Cavity Formation

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Solution Overview

Problem

Existing methods for forming microfluidic channels in semiconductor devices are complex and inefficient.

Innovation Solution

A structure comprising a semiconductor substrate with a trench and a layer stack, where a semiconductor layer is formed inside an opening in the layer stack to obstruct the trench, defining a cavity that functions as a microfluidic channel, using epitaxial growth and etching processes.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Ease of manufacture

If existing methods are used to form microfluidic channels in semiconductor devices, then the channels can be formed, but the process becomes complex and inefficient

Engineering Contradiction:
Improveease of forming microfluidic channelsVSAvoidprocess complexity
Core Design Contradiction:
Ease of manufactureVSDevice complexity

Solution Approach 1:

The microfluidic channel formation process is segmented into distinct stages: forming a trench in the substrate, depositing a layer stack with an opening, and filling the opening with semiconductor material. This segmentation allows each stage to be optimized independently, simplifying the overall manufacturing process while reducing complexity.

Inventive Principle:
Principle #1Segmentation

Solution Approach 2:

The layer stack with the opening is formed preliminarily before the actual channel cavity is created. This preliminary structure serves as a template that guides subsequent material deposition and defines the final channel geometry, making the overall process more efficient and easier to manufacture.

Inventive Principle:
Principle #10Preliminary action

2Productivity

If existing methods are used to form microfluidic channels, then channels can be created, but manufacturing efficiency is reduced

Engineering Contradiction:
Improvemanufacturing efficiencyVSAvoidtime for channel formation
Core Design Contradiction:
ProductivityVSLoss of time

Solution Approach 1:

Multiple functions are merged into the layer stack structure: it serves as both a protective layer, a pattern definition template, and a guide for cavity formation. This merging eliminates the need for separate process steps, thereby improving manufacturing efficiency and reducing the time required for channel formation.

Inventive Principle:
Principle #5Merging (Combining)

Solution Approach 2:

The opening in the layer stack is nested within the trench structure, and the semiconductor material filling the opening is nested within the opening itself. This nested arrangement allows for compact integration and enables subsequent processing steps to proceed simultaneously or in sequence without requiring additional time, thus improving productivity.

Inventive Principle:
Principle #7Nested doll (Nesting)

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

Simplifies the formation of microfluidic channels, enabling efficient fluid passage and integration with transistors, while reducing complexity and improving manufacturing efficiency.

Implementation Method 1

forming a third layer inside the opening in the layer stack. The third layer, which comprises a semiconductor material, obstructs the opening to define a cavity inside the trench

Methodology Applied
Scientific EffectEpitaxial growth: Epitaxy

Data Source

PatentUS12521714B2Microfluidic channels in a substrate with a surface covered by a layer stack
Publication Date: 2026.01.13 GLOBALFOUNDRIES US INC
  • US12521714B2 patent drawing
  • US12521714B2 patent drawing
  • US12521714B2 patent drawing

AI summary

Structures for a microfluidic channel and methods of forming a structure for a microfluidic channel. The structure comprises a semiconductor substrate including a trench and a layer stack on the semiconductor substrate. The layer stack includes a first layer, a second layer between the first layer and the semiconductor substrate, and an opening penetrating through the first layer and the second layer to the trench. The structure further comprises a third layer inside the opening in the layer stack. The third layer, which comprises a semiconductor material, obstructs the opening to define a cavity inside the trench.