μLED Direct Bonding via Contact Height Offsets
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Solution Overview
Problem
Conventional pick and place techniques for micro-LEDs (μLEDs) are inadequate due to low accuracy, high risk of physical damage, and limited flexibility in placement, especially when transferring μLEDs from multiple carrier substrates with different compositions and structures onto a single target substrate.
Innovation Solution
Direct bonding of μLEDs from carrier substrates to a target substrate using offsetting and varying contact heights between μLED contacts and target substrate contacts, allowing for precise and flexible placement of μLEDs without accidental bonding of adjacent devices.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If direct bonding techniques are used to transfer μLEDs from carrier substrates to target substrate, then transfer speed and precision are improved, but placement flexibility is reduced
Solution Approach 1:
The invention segments the bonding process into two distinct phases: first bonding μLEDs from the first carrier substrate to the target substrate, then bonding μLEDs from the second carrier substrate to the target substrate. This segmentation allows each bonding operation to be optimized independently, maintaining precision while enabling flexibility in selecting which μLEDs to transfer from each carrier substrate.
Solution Approach 2:
The invention performs preliminary actions by first bonding μLEDs from the first carrier substrate to the target substrate before attempting to bond μLEDs from the second carrier substrate. This preliminary bonding establishes a foundation that prevents accidental bonding of μLEDs from different carrier substrates, thereby maintaining placement precision and flexibility.
2Adaptability or versatility
If conventional pick and place techniques are used to transfer μLEDs, then placement flexibility is maintained, but transfer speed is reduced and physical damage risk increases
Solution Approach 1:
The invention replaces the mechanical pick and place system with a direct bonding system that uses controlled bonding forces to transfer μLEDs from carrier substrates to the target substrate. This substitution eliminates the need for mechanical pickup and placement operations, thereby increasing transfer speed while maintaining placement flexibility through controlled bonding parameters.
3Productivity
If μLEDs from multiple carrier substrates are bonded simultaneously to target substrate, then productivity is improved, but manufacturing precision deteriorates due to accidental bonding
Solution Approach 1:
The invention segments the bonding operation into sequential steps: first bonding μLEDs from the first carrier substrate to the target substrate, then bonding μLEDs from the second carrier substrate to the target substrate. This segmentation prevents accidental bonding of μLEDs from different carrier substrates while maintaining high productivity through efficient sequential processing.
Solution Approach 2:
The invention performs the bonding of μLEDs from the first carrier substrate as a preliminary action before bonding μLEDs from the second carrier substrate. This preliminary bonding establishes a foundation that prevents accidental bonding, thereby maintaining placement precision while enabling high-speed sequential processing.
Data Source
AI summary
A method for directly bonding semiconductor devices from multiple carrier substrates to a target substrate using relative alignments of semiconductor contacts to substrate contacts, as well as relative heights of semiconductor contacts to substrate contacts. The method may include directly bonding a subset of semiconductor devices on a first carrier substrate with a first alignment to a subset of substrate contacts, and directly bonding a subset of second semiconductor device on a second carrier substrate with a second alignment to a subset of substrate contacts. The method may include directly bonding a subset of semiconductor devices with a first height on a first carrier substrate to a first subset of substrate contacts, followed by directly bonding a second subset of second semiconductor devices with a second height on a second carrier substrate to a second subset of substrate contacts.