Cup-Shaped Reflective Micro-LED Package for Ultra-Thin Repairable Displays
Find Innovative SolutionsGenerate Solutions
Solution Overview
Problem
The transfer and repair processes in micro-LED displays are hindered by the thickness of conventional light emitting device packages, which also limit the implementation of ultra-thin displays and reduce light extraction efficiency.
Innovation Solution
A semiconductor light emitting device package with a reflective electrode structure in a cup shape and an ultra-thin design, removing the growth substrate, and employing flip-chip bonding for efficient transfer and repair, along with a common wiring structure for auxiliary pixels.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Illumination intensity
If a conventional LED package with growth substrate is used to improve light extraction efficiency, then light extraction efficiency is improved, but package thickness increases to several hundred μm
Solution Approach 1:
The patent removes the growth substrate (sapphire substrate) from the LED package structure after the LED chip is transferred to the panel substrate. This extraction of the unnecessary growth substrate reduces package thickness from several hundred μm to a much thinner profile, while the light extraction efficiency is maintained through the reflective electrode structure and optical design of the remaining package components.
2Illumination intensity
If a thick LED package is used to improve light extraction efficiency, then light extraction efficiency is improved, but repair process becomes difficult due to step difference
Solution Approach 1:
By removing the thick growth substrate from the package structure, the patent creates a thinner LED package that eliminates the step difference problem. This allows repair equipment to access and replace defective chips easily through the thin package structure, making the repair process feasible while maintaining adequate light extraction efficiency through optimized reflective electrodes and optical paths.
3Illumination intensity
If conventional LED package structure is used, then light extraction efficiency can be improved with PSS structure, but package thickness increases limiting ultra-thin display implementation
Solution Approach 1:
The patent extracts and removes the growth substrate that causes excessive thickness in conventional LED packages. This enables the implementation of ultra-thin micro-LED displays by eliminating the several hundred μm thick sapphire substrate, while light extraction efficiency is compensated through the reflective electrode structure and optimized optical path design within the thinner package.
Solution Approach 2:
The patent changes the optical parameters and structure of the package by implementing a reflective electrode structure with specific geometric configurations and materials. This alternative optical approach compensates for the reduced thickness, maintaining high light extraction efficiency without relying on the thick growth substrate used in conventional packages.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
Improves light extraction efficiency and transfer process efficiency, enabling ultra-thin micro-LED displays with optimal pixel performance and simplified repair processes.
Implementation Method 1
a first electrode 151 and a second electrode 152 electrically connected to the first conductivity type semiconductor layer 155a, the second conductivity type semiconductor layer 155c of the light emitting structure 155, respectively
Data Source
AI summary
The embodiment relates to a semiconductor light emitting device package and a display device including the same. Semiconductor light emitting device package according to an embodiment can comprises a light emitting structure 155 including a first conductivity type semiconductor layer 155a, an active layer 155b, and a second conductivity type semiconductor layer 155c; a first electrode 151 and a second electrode 152 electrically connected to the first conductivity type semiconductor layer 155a and the second conductivity type semiconductor layer 155c of the light emitting structure 155, respectively; an interlayer insulating layer disposed on the side of the light emitting structure 155 and an adhesive layer 158 disposed on the light emitting structure 155. The first electrode 151 can include a first reflective electrode 151a and a first pad electrode 151b, the second electrode 152 also can include a second reflective electrode 152a and a second pad electrode 152b, and a cross-sectional shape of the first reflective electrode 151a and the second reflective electrode 152a can comprise a cup shape.