Micro-LED Semiconductor Structure With Etch-Stop Light Blocking Layers
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Solution Overview
Problem
Conventional Micro-LED technologies face damage to the epitaxial structure during substrate stripping, leading to mechanical fragmentation and defects that affect lattice quality and optical performance.
Innovation Solution
A semiconductor structure with a light-emitting structure and a light-control layer, featuring a growth substrate layer and an etching stop layer stacked along a direction away from the light-emitting structure, which serves as a light blocking wall and controls substrate thickness, reducing damage and ensuring uniform light output and high extraction rates.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Weight of stationary object
If substrate stripping process is performed to reduce substrate thickness, then device weight and overall thickness are reduced, but epitaxial structure damage occurs causing mechanical fragmentation and defects
Solution Approach 1:
An etching stop layer is formed at a predetermined position within the substrate before the thinning process begins. This preliminary structural preparation enables controlled etching that stops at the desired thickness, preventing over-etching and damage to the epitaxial structure while achieving the target substrate thickness reduction
Solution Approach 2:
The etching stop layer acts as an intermediary element between the substrate and the epitaxial structure. It mediates the thinning process by providing a defined stopping point for etching, thereby protecting the epitaxial structure from mechanical fragmentation and defects while still allowing sufficient thickness reduction
2Productivity
If substrate thickness is reduced to improve device integration, then manufacturing density increases, but mechanical strength and structural stability decrease
Solution Approach 1:
The etching stop layer is pre-formed at a specific depth within the substrate before thinning operations. This preliminary action establishes a precise stopping point that controls the final substrate thickness, enabling consistent thickness reduction across production while maintaining adequate mechanical strength through controlled residual thickness
3Speed
If conventional substrate stripping is used to remove substrate, then processing speed is maintained, but epitaxial layer quality deteriorates due to stress release
Solution Approach 1:
The etching stop layer serves as an intermediary that enables controlled substrate removal. It allows the substrate thinning process to proceed efficiently while stopping precisely at the desired thickness, preventing stress-induced damage to the epitaxial layer and maintaining high manufacturing precision without sacrificing processing speed
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The solution effectively reduces epitaxial structure damage, improves optical performance, and prevents light crosstalk by using the etching stop layer and growth substrate layer as a light blocking wall between light-control regions, enhancing the overall performance and yield of semiconductor structures.
Implementation Method 1
an etching stop layer structure (102a), and a growth substrate layer structure (101a) stacked along a direction away from the light-emitting structure
Implementation Method 2
the substrate structure and the light-control layer can serve as a light blocking wall between adjacent two light-control regions
Data Source
AI summary
Disclosed are a semiconductor structure, a manufacturing method of a semiconductor structure, and a light-emitting device. The semiconductor structure includes: a light-emitting structure including a plurality of light-emitting units, where an insulating structure is disposed between adjacent two light-emitting units; and a light-control layer, disposed on a side of the light-emitting structure, including a plurality of light-control regions regularly disposed and a substrate structure disposed between adjacent two light-control regions, one light-control region corresponding to at least one light-emitting unit, where the substrate structure includes a growth substrate layer structure and an etching stop layer structure stacked along a direction away from the light-emitting structure.