Micro-LED HEMT Structure With Etch-Stop Layer for Plasma Protection
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Solution Overview
Problem
Manufacturing high-resolution display devices using micro-LEDs requires high-efficiency small LED chips and advanced transfer technologies to accurately position the tiny chips, but existing methods struggle to protect the light-emitting elements from plasma etching processes, which can degrade their light emission characteristics.
Innovation Solution
A semiconductor device design featuring an etch-stop layer made of AlGaN or AlN with magnesium as a P-type dopant, which protects the light-emitting element from plasma etching and enhances p-type doping in the upper semiconductor layer, combined with a high-temperature heat treatment to remove hydrogen gas and improve light emission luminance, along with a method of stacking and patterning layers to form HEMT and light-emitting elements on a substrate.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If plasma etching process is used to manufacture micro-LED chips, then manufacturing precision and productivity are improved, but the light-emitting elements are damaged and light emission characteristics are degraded
Solution Approach 1:
An etch-stop layer comprising AlGaN and AlN is introduced as an intermediary protective layer between the plasma etching process and the light-emitting elements. This layer selectively resists plasma etching, allowing precise positioning of micro-LED chips while protecting the underlying light-emitting structures from damage.
Solution Approach 2:
The etch-stop layer is formed in advance before the plasma etching process. By pre-establishing this protective barrier, the light-emitting elements are shielded from harmful plasma effects during subsequent manufacturing steps, enabling high-precision chip positioning without compromising element integrity.
2Device complexity
If conventional doping methods are used, then device complexity is reduced, but p-type doping efficiency in upper semiconductor layer is insufficient
Solution Approach 1:
The etch-stop layer comprising AlGaN and AlN serves a dual function: it protects against plasma etching and simultaneously provides self-doping to the upper semiconductor layer. The layer's composition enables automatic p-type doping without requiring separate complex doping steps, achieving high doping efficiency while maintaining process simplicity.
Solution Approach 2:
The etch-stop layer performs multiple functions simultaneously: (1) acts as a plasma etching barrier, (2) provides p-type doping to the upper semiconductor layer, and (3) serves as a structural interface layer. This multi-functionality resolves the contradiction by achieving reliable doping without increasing device complexity.
3Illumination intensity
If high-resolution display devices are manufactured using micro-LEDs, then illumination intensity and productivity are improved, but transfer technology complexity and manufacturing difficulty increase
Solution Approach 1:
The etch-stop layer is pre-formed on the substrate before micro-LED chip transfer and positioning. This preliminary structure provides a protective barrier that simplifies the transfer process by enabling plasma etching-based positioning methods without risking damage to the delicate micro-LED chips, thereby reducing transfer technology complexity while maintaining high-resolution display performance.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The solution effectively prevents damage to light-emitting elements during plasma etching, enhances p-type doping, and increases light emission luminance, enabling the production of high-resolution display devices with improved performance.
Implementation Method 1
protect the light-emitting element from plasma etching
Implementation Method 2
enhances p-type doping in the upper semiconductor layer
Implementation Method 3
high-temperature heat treatment to remove hydrogen gas and improve light emission luminance
Data Source
AI summary
A semiconductor device includes a substrate including a first region and a second region adjacent to the first region, the first and the second regions being disposed in a first direction parallel to an upper surface of the substrate; an etch-stop layer disposed on the first region and the second region; a separation layer disposed on an upper portion of the etch-stop layer, the separation layer being disposed on the first region; a high-electron-mobility transistor (HEMT) element disposed on an upper portion of the separation layer in a second direction perpendicular to an upper surface of the substrate; a light-emitting element disposed on the second region between the substrate and the etch-stop layer; and a plurality of first insulating patterns covering side surfaces of the HEMT element, the plurality of first insulating patterns extending to the etch-stop layer.