Micro-LED Chip Structure With Integrated MOSFETs for Heat Dissipation
Find Innovative SolutionsGenerate Solutions
Solution Overview
Problem
High-density and high-brightness micro light-emitting diode displays face challenges with heat dissipation and cost due to the need for large gate drive ICs, which limits the number of gate channels and increases power consumption.
Innovation Solution
A chip structure integrating a metal oxide semiconductor field effect transistor (MOSFET) on a package substrate, where the MOSFET's source is connected to a common input voltage, its gate to a main control circuit, and one end of the light-emitting diode (LED) element is connected to the MOSFET's drain, with the other end connected to a source drive circuit, allowing for reduced current carried by each MOSFET and improved heat dissipation.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Adaptability or versatility
If the gate drive IC is used to control multiple light-emitting diodes, then the control function is achieved, but the chip size increases and heat dissipation becomes difficult
Solution Approach 1:
The patent divides the gate drive function into multiple independent MOSFETs, with each MOSFET controlling a subset of light-emitting diodes. This segmentation reduces the current burden on each individual transistor, thereby improving heat dissipation while maintaining the overall control function across the entire display panel.
2Illumination intensity
If the gate drive IC carries high current for high density and brightness, then the brightness requirement is met, but the chip size increases
Solution Approach 1:
The patent segments the high current control into multiple parallel MOSFET channels, where each MOSFET handles a portion of the total current. This allows the system to achieve high overall brightness without requiring a single large chip, as multiple smaller MOSFETs can be arranged in a compact configuration.
Solution Approach 2:
The patent transitions from a planar IC layout to a three-dimensional chip structure with stacked layers. The MOSFETs are arranged in multiple layers vertically, allowing more transistors to be packed into a smaller footprint area, thus achieving high brightness without increasing the chip's planar dimensions.
3Adaptability or versatility
If multiple gate drive ICs are used to increase gate channels, then the control capacity increases, but the cost increases due to multiple ICs
Solution Approach 1:
The patent integrates multiple MOSFETs and their associated control circuits into a single unified chip structure, eliminating the need for multiple separate gate drive ICs. This consolidation reduces the total component count, simplifies assembly, and lowers overall system cost while providing sufficient gate channel capacity for high-density displays.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This configuration reduces heat dissipation issues and costs by dispersing MOSFETs in each chip, enabling high-density and high-brightness displays while optimizing power consumption and efficiency.
Implementation Method 1
at least one light-emitting diode (LED) element... Each MOSFET comprises a source, a gate and a drain... An end of the at least one LED element is connected with the at least one drain of the at least one MOSFET
Data Source
AI summary
The invention provides a chip structure of a micro light-emitting diode display, comprising a package substrate, at least one light-emitting diode (LED) element, at least one metal oxide semiconductor field effect transistor (MOSFET), and a connection line. The LED element and the MOSFET are positioned on the package substrate, and each MOSFET comprises a source connected with the input voltage in common, a gate connected with a main control circuit, and a drain. An end of the LED element is connected with the drain of the MOSFET through the connection line, and the other end of the LED element is independently connected with a source drive circuit. Therefore, the MOSFET is provided on the package substrate and integrated in a chip structure, so as to achieve a better heat dissipation effect and requirements of high density and brightness.