μ-LED Quantum Well Structure for High-Density Light Emission
Find Innovative SolutionsGenerate Solutions
Solution Overview
Problem
The development of μ-LEDs for augmented reality and automotive applications faces challenges due to their small size, which complicates production and processing, leading to issues like the fly screen effect, reduced packing density, and increased non-radiative recombination, affecting efficiency and luminosity.
Innovation Solution
The use of slotted antenna structures and quantum well intermixing techniques to enhance radiative recombination, combined with specific semiconductor layer designs and epitaxial growth methods, addresses the challenges of small size and non-radiative recombination, improving light emission efficiency and reducing defects.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If μ-LED size is reduced for high-resolution displays, then pixel density is improved, but non-radiative recombination increases and light emission efficiency deteriorates
Solution Approach 1:
The patent applies local quality by creating a quantum well structure with specific compositional gradients (InxGa1-xN layers with varying indium content) in the active region. This local structural optimization enhances radiative recombination probability in the confined quantum well region while maintaining the overall small μ-LED size, thereby improving light emission efficiency without sacrificing pixel density.
Solution Approach 2:
The patent utilizes parameter changes by adjusting the indium composition ratio (x) in InxGa1-xN quantum well layers and controlling layer thicknesses (5nm-50nm ranges). These parameter optimizations tune the band structure to enhance radiative recombination rates, allowing efficient light emission from miniaturized μ-LED structures used in high-resolution displays.
2Manufacturing precision
If μ-LED size is reduced for high-resolution displays, then pixel density is improved, but light emission intensity deteriorates
Solution Approach 1:
The patent employs local quality enhancement by implementing quantum well intermixing structures with graded indium composition in the active region. This creates localized regions of enhanced radiative recombination that compensate for the reduced overall device size, maintaining sufficient light emission intensity even in miniaturized μ-LEDs required for high-resolution displays.
Solution Approach 2:
The patent uses composite material structures combining multiple InxGa1-xN layers with different indium compositions (x values ranging from 0.1 to 0.5) to create a quantum well intermixing structure. This composite approach enables tailored optical properties that enhance light emission intensity from each μ-LED pixel while maintaining the small form factor necessary for high pixel density displays.
3Loss of energy
If quantum well intermixing is used to enhance radiative recombination, then light emission efficiency is improved, but manufacturing complexity increases
Solution Approach 1:
The patent manages manufacturing complexity through parameter changes by optimizing the indium composition gradient (x values from 0.1 to 0.5) and layer thicknesses (5nm-50nm) in the quantum well structure. These controlled parameter variations enable enhanced radiative recombination while maintaining compatibility with existing semiconductor fabrication processes, balancing performance improvement with manufacturability.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
These approaches enhance the efficiency of μ-LEDs by increasing radiative recombination, reducing non-radiative recombination, and improving luminosity, enabling high current densities and contrast ranges necessary for automotive and augmented reality applications.
Implementation Method 1
enhance radiative recombination
Implementation Method 2
quantum well intermixing techniques to enhance radiative recombination
Implementation Method 3
epitaxial growth methods
Data Source
AI summary
The invention relates to various aspects of a μ-LED or a μ-LED array for augmented reality or lighting applications, in particular in the automotive field. The μ-LED is characterized by particularly small dimensions in the range of a few μm.