Micro-LED Assembly Control Layers for Precise Self-Alignment

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Solution Overview

Problem

The challenge of transferring millions of micro-sized semiconductor light emitting diodes for large-screen displays is difficult due to low transfer precision and the asymmetric shape of these diodes, which complicates self-assembly processes.

Innovation Solution

A display device configuration with a base portion, assembled electrodes, a dielectric layer, and semiconductor light emitting diodes, featuring different assembly control layers and electrodes, allows for precise alignment and assembly using magnetic and electric fields, enabling high-efficiency transfer and assembly of asymmetric diodes.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Productivity

If self-assembly method is used for transferring micro LED, then productivity is improved, but manufacturing precision deteriorates due to low transfer precision

Engineering Contradiction:
Improvetransfer speedVSAvoidtransfer precision
Core Design Contradiction:
ProductivityVSManufacturing precision

Solution Approach 1:

The patent applies local quality by creating asymmetric structures on the micro LED surface, including a first assembly control layer with different material properties than a second assembly control layer. This asymmetric design provides directional guidance during self-assembly, enabling both high-speed transfer and precise positioning by making the assembly process sensitive to orientation while maintaining rapid bulk assembly capabilities

Inventive Principle:
Principle #3Local quality

Solution Approach 2:

The patent directly applies asymmetry by designing the micro LED with non-uniform surface structures, including protrusions on electrodes and asymmetric assembly control layers. This asymmetric configuration enables the micro LEDs to self-align in a specific direction during self-assembly, resolving the contradiction between fast assembly and precise positioning by making the assembly process inherently directional

Inventive Principle:
Principle #4Asymmetry

2Device complexity

If asymmetric shape micro LED is used, then device complexity is reduced, but manufacturing precision deteriorates due to alignment difficulty

Engineering Contradiction:
Improvestructure simplicityVSAvoidalignment precision
Core Design Contradiction:
Device complexityVSManufacturing precision

Solution Approach 1:

The patent embraces the asymmetric shape of micro LEDs by incorporating asymmetric features into the assembly control layers and electrode structures. The asymmetric design of the first and second assembly control layers with different materials and positions works synergistically with the asymmetric micro LED shape to provide directional alignment cues, transforming the alignment challenge into a self-guiding mechanism that maintains both structural simplicity and alignment precision

Inventive Principle:
Principle #4Asymmetry

3Manufacturing precision

If conventional transfer methods are used, then manufacturing precision is maintained, but productivity deteriorates due to difficulty in transferring millions of diodes

Engineering Contradiction:
Improvetransfer precisionVSAvoidtransfer efficiency
Core Design Contradiction:
Manufacturing precisionVSProductivity

Solution Approach 1:

The patent applies self-service by designing the micro LED structure to autonomously guide its own positioning during assembly. The asymmetric assembly control layers and electrode protrusions create self-aligning forces that enable the micro LEDs to find their correct positions automatically during self-assembly, eliminating the need for complex external positioning systems while maintaining high precision across millions of transfers

Inventive Principle:
Principle #25Self-service

Solution Approach 2:

The patent utilizes parameter changes by varying the material properties, thickness, and spatial distribution of the assembly control layers. These parameter variations create differential forces during assembly that guide positioning, enabling simultaneous achievement of high-speed parallel assembly and precise individual placement accuracy

Inventive Principle:
Principle #35Parameter changes

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

This method enables high-speed, low-cost assembly of large numbers of semiconductor light emitting diodes, facilitating the production of large-area displays with improved transfer precision and reduced non-specific binding.

Implementation Method 1

a plurality of assembled electrodes disposed on the base portion and configured to generate an electric field when power is applied

Methodology Applied
Scientific EffectElectric field: Electric Field

Implementation Method 2

each of the semiconductor light emitting diodes includes a first assembly control layer formed in a portion of an entire area of one surface facing the dielectric layer; and a second assembly control layer formed in another portion of the entire area of one surface facing the dielectric layer and made of a material different from that of the first assembly control layer

Methodology Applied
Scientific EffectElectrophoresis: Electrophoresis

Data Source

PatentUS12469828B2Display device using semiconductor light-emitting devices having a passivation layer
Publication Date: 2025.11.11 LG ELECTRONICS INC
  • US12469828B2 patent drawing
  • US12469828B2 patent drawing
  • US12469828B2 patent drawing

AI summary

The present invention relates to a display device, and more particularly, to a display device using semiconductor light-emitting devices of several micrometers to tens of micrometers in size. The present invention provides a display device comprising: a base part; a plurality of assembly electrodes which is arranged on the base part and which generates an electric field when power is applied thereto; a dielectric layer formed to cover the assembly electrodes; and a plurality of semiconductor light-emitting devices arranged on the dielectric layer; wherein each of the semiconductor light-emitting devices comprises: a first assembly control layer formed at a portion of the whole area of one surface facing the dielectric layer; and a second assembly control layer formed at the other portion of the whole area of the one surface facing the dielectric layer, and made of a material different from that of the first assembly control layer.