Micro-LED Insulating Structure for Sidewall Defect Protection
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Solution Overview
Problem
Micro optoelectronic semiconductor devices, such as micro light-emitting diodes, are prone to sidewall and top surface defects during manufacturing, leading to failure, poor reliability, and reduced reverse voltage due to processing damage, which significantly impacts production yield.
Innovation Solution
An insulating structure is applied to the sidewalls or a portion of the sidewalls of the stack structure in optoelectronic semiconductor devices to prevent defects and enhance reliability and yield by covering the sidewalls and top surfaces, thereby increasing the reverse voltage.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Volume of moving object
If micro optoelectronic semiconductor devices are miniaturized, then device size is reduced and integration is improved, but sidewall and top surface defects increase leading to poor reliability
Solution Approach 1:
An insulating structure is formed on the sidewalls of the stack structure before subsequent processing steps. This preliminary protective layer prevents processing damage to the sidewalls and top surfaces during manufacturing, thereby reducing defects and improving device reliability while maintaining miniaturization benefits
Solution Approach 2:
The insulating structure acts as a protective cushion layer that absorbs or mitigates processing damage during manufacturing. By providing this beforehand cushioning on the sidewalls, the device is protected from defects that would otherwise occur during subsequent processing steps, maintaining reliability in miniaturized devices
2Ease of manufacture
If processing steps are performed on miniaturized devices, then manufacturing is completed, but processing damage occurs on sidewalls and top surfaces reducing reverse voltage
Solution Approach 1:
The insulating structure is formed on the sidewalls before subsequent processing steps are performed. This preliminary protective layer allows manufacturing steps to be completed while preventing processing damage to the sidewalls and top surfaces, maintaining manufacturing precision despite miniaturization
Solution Approach 2:
The insulating structure serves as an intermediary protective layer between the semiconductor stack structure and subsequent processing steps. It mediates the interaction by absorbing processing stress and preventing direct damage to the delicate sidewalls and top surfaces of miniaturized devices
Data Source
AI summary
An optoelectronic semiconductor device is provided. The optoelectronic semiconductor device includes a stack structure having a top surface and including a first semiconductor layer, a second semiconductor layer and an active region between the first semiconductor layer and the second semiconductor layer. The optoelectronic semiconductor device further includes a first insulating structure covering the stack structure and having a first upper surface and a sidewall. The first upper surface is coplanar with or lower than the top surface of the stack structure. The optoelectronic semiconductor device further includes a second insulating structure covering the first upper surface, the sidewall of the first insulating structure and the top surface of the stack structure. The first insulating structure directly contacts the second insulating structure.