Micro-LED Transfer Mask Layout for Precise Laser Alignment
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Solution Overview
Problem
The technical challenges in micro-LED display technology include precise alignment issues during the transfer process of semiconductor light emitting devices due to laser beam dispersion and refraction, leading to decreased alignment accuracy and increased complexity in panel design and transfer processes, particularly with the use of auxiliary pixels.
Innovation Solution
A transfer device utilizing a line beam laser generator and a through-type glass mask with a light-blocking glass layer and reflective metal layer, which allows for precise alignment of semiconductor light emitting devices without refraction or dispersion, and a display device design incorporating shared redundancy pixels to enhance yield and simplify panel design.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If a buffer layer is used to prevent damage to the non-transmissive layer, then the non-transmissive layer is protected from laser damage, but the laser beam is dispersed and scattered in the buffer layer, negatively affecting precise alignment
Solution Approach 1:
The patent introduces a reflective layer as an intermediary component between the buffer layer and the non-transmissive layer. This reflective layer serves as a mediator that redirects the laser beam, allowing the buffer layer to continue providing protection while preventing the laser from dispersing in a way that compromises alignment precision.
2Productivity
If the laser beam passes through the mask substrate, then the transfer process can be completed, but refraction of the laser beam occurs at the interface between the mask substrate and air, causing alignment problems
Solution Approach 1:
The patent converts the potentially harmful refraction effect into a beneficial alignment mechanism by strategically placing a reflective layer at the interface where refraction occurs. This reflective layer captures the refracted laser beam and redirects it to the precise target location, transforming the refraction problem into an opportunity for enhanced alignment control.
3Reliability
If auxiliary pixels are used to compensate for defective main pixels, then yield is improved, but the number of chips to be transferred doubles, increasing the difficulty of panel design and transfer process
Solution Approach 1:
The patent merges the functionality of auxiliary pixels with the main pixel array by integrating them into a unified transfer and activation system. The reflective layer enables simultaneous targeting of both main and auxiliary pixels, allowing the system to treat them as a combined functional unit rather than separate systems, thereby reducing design complexity despite the increased number of chips.
4Manufacturing precision
If a complex optical system is used for laser lift-off, then selective transfer of semiconductor light emitting device chips is achieved, but the equipment price is expensive and precise alignment between laser shot and light emitting device chip is difficult
Solution Approach 1:
The patent extracts the critical alignment function from the complex optical system and consolidates it into a simple reflective layer structure. By removing the need for complex optical components and relying instead on the straightforward reflective geometry, the system maintains selective transfer capability while dramatically simplifying the overall device architecture and reducing costs.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The solution enables precise alignment of laser beams with semiconductor light emitting devices, improving transfer efficiency and yield while reducing panel design and transfer process complexity by using shared auxiliary pixels to compensate for defective main pixels.
Implementation Method 1
a through-type glass mask with a light-blocking glass layer and reflective metal layer, which allows for precise alignment of semiconductor light emitting devices without refraction or dispersion
Implementation Method 2
A transfer device utilizing a line beam laser generator and a through-type glass mask
Data Source
AI summary
Embodiments relate to a transfer device of a semiconductor light emitting device and a display device of a semiconductor light emitting device using the same.A semiconductor light emitting device transfer device according to an embodiment can include a line beam laser generating device and a through-type glass mask disposed on a semiconductor substrate including a predetermined semiconductor light emitting device.The line beam laser 210 generated by the line beam laser generator can pass through the through-type glass mask to selectively transfer the semiconductor light emitting device on the semiconductor substrate onto a predetermined panel substrate.