Microphone Insulating Layer Angle for Hole Prevention
Find Innovative SolutionsGenerate Solutions
Solution Overview
Problem
The existing manufacturing methods for microphones result in unexpected holes forming below the supporting layer due to the removal of insulating layers during the wet-etching process, affecting the microphone's performance.
Innovation Solution
The method involves forming a substrate structure with a first and second insulating layer, where the first electrode plate layer and second insulating layer form an angle of 90° to 180°, which improves the filling effect of the supporting layer and reduces weak points, thereby preventing hole formation during the wet-etching process.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Ease of manufacture
If wet-etching is used to form a cavity by removing insulating layers, then the cavity formation is achieved, but unexpected holes are formed below the supporting layer due to removal of insulating layers that should be preserved
Solution Approach 1:
The patent applies preliminary action by forming a protective structure (first electrode plate layer and second insulating layer at specific angle) before the wet-etching process. This pre-formed structure serves as a barrier that prevents the etchant from reaching and removing the insulating layers below the supporting layer, thus protecting them during the cavity formation process.
Solution Approach 2:
The first electrode plate layer and second insulating layer form an intermediary protective barrier between the wet-etchant and the insulating layers that need to be preserved. This intermediary structure allows the etchant to remove unnecessary insulating material to form the cavity while blocking the etchant from reaching and damaging the protected insulating layers.
2Productivity
If insulating layers are removed during wet-etching to form a cavity, then the cavity is created, but the supporting layer structure becomes weak and holes form
Solution Approach 1:
The protective structure is formed in advance before the wet-etching process, creating a reliable barrier that maintains supporting layer integrity throughout the cavity formation. This preliminary protective measure ensures that the supporting layer does not develop weak points or holes during the etching process.
Solution Approach 2:
The first electrode plate layer and second insulating layer form a cushioning protective barrier that absorbs and deflects the harmful effect of the wet-etchant. This beforehand cushioning prevents the etchant from directly attacking the supporting layer and the insulating layers below it, thus preventing hole formation and maintaining structural reliability.
3Manufacturing precision
If the first electrode plate layer and second insulating layer form an angle of 90° to 180°, then the filling effect of the supporting layer is improved and weak points are reduced, but the manufacturing process complexity increases
Solution Approach 1:
The patent applies parameter changes by optimizing the angle between the first electrode plate layer and second insulating layer to be between 90° and 180°. This specific angular parameter range improves the filling effect of the supporting layer and reduces weak points by ensuring proper geometric configuration for material deposition and structural integrity.
Solution Approach 2:
The patent employs asymmetry by forming the first electrode plate layer and second insulating layer at a specific non-90° angle (90° to 180°) rather than perpendicular alignment. This asymmetric angular configuration optimizes the filling effect and eliminates weak points in the supporting layer structure, improving overall manufacturing precision.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach enhances the filling effect of the supporting layer and eliminates the issue of hole formation, improving the microphone's performance by ensuring a more robust structure.
Implementation Method 1
when seen from the top, the first electrode plate layer and the second insulating layer form an angle, the angle exposes a second part of the substrate, and a degree θ of the angle is larger than or equal to 90° and is smaller than or equal to 180°
Implementation Method 2
forming a second insulating layer, the second insulating layer covering a part of a region of the first insulating layer which is not covered by the first electrode plate layer and a part of the first electrode plate layer
Data Source
AI summary
The present application teaches microphones and manufacturing methods therefor and relates to the field of semiconductor technologies. In some implementations, a method may include: providing a substrate structure, the substrate structure including a substrate and a first insulating layer covering a first part of the substrate; forming a first electrode plate layer, the first electrode plate layer covering a part of the first insulating layer; and forming a second insulating layer, the second insulating layer covering a part of a region of the first insulating layer which is not covered by the first electrode plate layer and a part of the first electrode plate layer, where when seen from the top, the first electrode plate layer and the second insulating layer form an angle, the angle exposes a second part of the substrate, and a degree θ of the angle is larger than or equal to 90° and is smaller than or equal to 180°. The present application can improve a problem of unexpected holes formed in the microphone.