Microporous Anodic Bonding Structure for Dense Electronic Connections
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Solution Overview
Problem
Current methods for electrical connection between electronic components, such as semiconductor elements and circuit boards, face challenges in securing stability and reliability due to thermal expansion mismatches and the complexity of bonding processes, particularly in achieving high connection densities with small Cu/Sn bumps.
Innovation Solution
A method involving the formation of a conductive layer, a valve metal layer, and an anodic oxidation film with micropores that are filled with a conductive material, allowing for easy bonding without the need for complex surface preparation or strict environmental control, using steps like anodization, pore widening, and filling with conductive material.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If hybrid bonding is used to achieve high connection density and reliability, then electrical connection stability is improved, but the bonding process becomes complicated due to the need for CMP mirror-surfacing and strict environmental control
Solution Approach 1:
The invention extracts and eliminates the need for CMP mirror-surfacing and strict environmental control from the bonding process. By using a bonding structure with protrusions and recesses that enable mechanical interlocking, the patent removes these complex process requirements while maintaining reliable electrical connection
Solution Approach 2:
The invention uses a bonding structure that does not require permanent environmental control measures or expensive CMP processing. The bonding interface is designed to be robust and tolerant, allowing bonding to proceed under less stringent conditions without compromising reliability
2Productivity
If Cu/Sn bump size is reduced to achieve high connection density, then connection density is improved, but manufacturing difficulty increases due to limitations in current electroplating technology
Solution Approach 1:
The invention applies local quality by creating bonding structures with specific geometric features (protrusions and recesses) at the bonding interface. This localized structural design enables high connection density without requiring uniform reduction of all bump dimensions, making manufacturing more feasible
Solution Approach 2:
The invention transitions from relying solely on bump size reduction (one dimension) to achieving high connection density through three-dimensional bonding structures with protrusions and recesses. This dimensional approach allows maintaining larger, easier-to-manufacture bumps while achieving high effective connection density through vertical and lateral structural features
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This method enables reliable and efficient electrical connections with improved bonding ease and reduced complexity, allowing for higher connection densities without the need for precise surface mirroring or stringent environmental control, enhancing the stability and reliability of electronic connections.
Implementation Method 1
an anodic oxidation film forming step of forming an anodic oxidation film by performing an anodization treatment on the valve metal layer in a region on the conductive layer using the conductive layer as an electrode
Implementation Method 2
a filling step of filling the micropores with a conductive material
Data Source
AI summary
Provided is a method of manufacturing a structure that can be easily bonded to a bonding target. The method of manufacturing a structure includes: a conductive layer forming step of forming a conductive layer having conductivity on a part of a surface of an insulating support including at least one surface; a valve metal layer forming step of forming a valve metal layer that covers at least a part of the conductive layer; an anodic oxidation film forming step of forming an anodic oxidation film by performing an anodization treatment on the valve metal layer in a region on the conductive layer using the conductive layer as an electrode; a micropore forming step of forming a plurality of micropores that extend in a thickness direction on the anodic oxidation film; and a filling step of filling the micropores with a conductive material, in which a valve metal layer removing step of removing the valve metal layer having undergone the anodic oxidation film forming step is performed between the anodic oxidation film forming step and the filling step.