Microsized Optoelectronic Semiconductor Elements for High Resolution Displays

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Solution Overview

Problem

Conventional optoelectronic devices manufactured using LEDs require higher manufacturing accuracy and cost, leading to increased time and cost, and limited resolution due to larger LED sizes, which is not suitable for applications like VR or AR head-mounted displays.

Innovation Solution

An optoelectronic semiconductor device comprising microsized optoelectronic semiconductor elements with a side length between 1 μm and 100 μm, disposed on an epitaxial substrate, allowing for higher density and resolution, with a conducting circuit and photoluminescence layer, suitable for various applications including VR and AR displays.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Manufacturing precision

If conventional LEDs with side length greater than 100 μm are used in the manufacturing procedure, then the manufacturing process is simpler, but the resolution of the optoelectronic device is limited

Engineering Contradiction:
ImproveresolutionVSAvoidmanufacturing procedure complexity
Core Design Contradiction:
Manufacturing precisionVSDevice complexity

Solution Approach 1:

The patent segments the conventional large LED into multiple microsized optoelectronic semiconductor elements (1-100 μm) that can be arranged in arrays on the epitaxial substrate. This segmentation enables higher resolution displays while maintaining a streamlined manufacturing process through direct epitaxial growth of multiple elements simultaneously.

Inventive Principle:
Principle #1Segmentation

2Manufacturing precision

If microsized optoelectronic semiconductor elements with side length 1-100 μm are used, then the resolution and density are improved, but the manufacturing accuracy requirement and cost increase

Engineering Contradiction:
ImproveresolutionVSAvoidmanufacturing accuracy requirement
Core Design Contradiction:
Manufacturing precisionVSEase of manufacture

Solution Approach 1:

The patent merges multiple microsized optoelectronic semiconductor elements into a single integrated structure grown directly on the epitaxial substrate. This combining approach allows simultaneous fabrication of multiple high-precision elements in one manufacturing process, achieving high resolution without proportionally increasing manufacturing complexity or cost.

Inventive Principle:
Principle #5Merging (Combining)

3Manufacturing precision

If conventional LED manufacturing procedure is used, then the manufacturing cost is lower for larger LEDs, but the manufacturing time increases for achieving high resolution

Engineering Contradiction:
ImproveresolutionVSAvoidmanufacturing time
Core Design Contradiction:
Manufacturing precisionVSProductivity

Solution Approach 1:

The patent performs preliminary action by directly growing multiple microsized optoelectronic semiconductor elements in their final high-density arrangement on the epitaxial substrate during the epitaxial process. This preliminary formation eliminates subsequent time-consuming steps of individual element fabrication, transfer, and assembly, thereby reducing manufacturing time while achieving high resolution.

Inventive Principle:
Principle #10Preliminary action

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

The device reduces manufacturing time and cost while enabling higher resolution displays, such as VR or AR head-mounted displays, by utilizing microsized elements on an epitaxial substrate with improved density and accuracy.

Implementation Method 1

The microsized optoelectronic semiconductor elements include a light-emitting element and a light-receiving element

Methodology Applied
Scientific EffectElectroluminescence: Electroluminescence

Implementation Method 2

When a second voltage is provided for the microsized optoelectronic semiconductor element, the microsized optoelectronic semiconductor element is a light-receiving element

Methodology Applied
Scientific EffectPhotoelectric Effect: Photoelectric Effect

Implementation Method 3

the optoelectronic semiconductor device further comprises a photoluminescence layer

Methodology Applied
Scientific EffectPhotoluminescence: Photoluminescence

Data Source

PatentUS10566322B2Optoelectronic semiconductor device
Publication Date: 2020.02.18 LG DISPLAY CO LTD
  • US10566322B2 patent drawing
  • US10566322B2 patent drawing
  • US10566322B2 patent drawing

AI summary

An optoelectronic semiconductor device includes an epitaxial substrate and a plurality of microsized optoelectronic semiconductor elements. The microsized optoelectronic semiconductor elements are disposed separately and disposed on a surface of the epitaxial substrate. A length of a side of each of the microsized optoelectronic semiconductor elements is between 1 μm and 100 μm, and a minimum interval between two adjacent microsized optoelectronic semiconductor elements is 1 μm.