Microstructured Passivation Layer for Higher Image Sensor Light Absorption

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Solution Overview

Problem

Semiconductor image sensors face challenges in achieving optimal light absorption, which is crucial for converting sensed light into digital data or electrical signals.

Innovation Solution

The implementation of a passivation layer with microstructures, such as triangular, trapezoidal, or arc-shaped features, above the light sensing devices in the semiconductor image sensors. These microstructures enhance light absorption by providing a larger top surface area for multiple reflections and refractions, thereby increasing the absorption ratio of incident light.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Loss of energy

If a planar passivation layer is used, then the device structure is simple and easy to manufacture, but the light absorption ratio is low due to reflection loss

Engineering Contradiction:
Improvelight absorption ratioVSAvoidpassivation layer structure
Core Design Contradiction:
Loss of energyVSDevice complexity

Solution Approach 1:

The patent applies curvature by forming microstructures (such as hemispheres, domes, or rounded shapes) on the passivation layer surface. These curved surfaces cause incident light to undergo multiple reflections and refractions, increasing the optical path length and absorption ratio. The curved geometry transforms the flat surface into a light-trapping structure that reduces reflection loss while maintaining manufacturing feasibility through standard semiconductor processing techniques.

Inventive Principle:
Principle #14Spheroidality (Curvature)

2Ease of manufacture

If the passivation layer surface is flattened to reduce complexity, then manufacturing is easier, but light absorption capability deteriorates

Engineering Contradiction:
Improvepassivation layer fabricationVSAvoidlight absorption ratio
Core Design Contradiction:
Ease of manufactureVSLoss of energy

Solution Approach 1:

The patent segments the passivation layer surface into multiple microstructures (arrays of small hemispheres, domes, or rounded elements) rather than using a single flat surface. Each microstructure independently traps light through multiple reflections, and the collective array provides comprehensive light absorption across the sensor surface. This segmentation approach maintains ease of manufacture through standard photolithography and etching processes while dramatically improving light absorption ratio.

Inventive Principle:
Principle #1Segmentation

3Loss of energy

If microstructures are added to enhance light absorption, then light sensing capability improves, but device complexity increases

Engineering Contradiction:
Improvelight absorption ratioVSAvoidmicrostructure fabrication
Core Design Contradiction:
Loss of energyVSDevice complexity

Solution Approach 1:

The patent employs self-service by forming microstructures that automatically trap and absorb light through their inherent geometric properties, without requiring additional active components or complex control mechanisms. The microstructures (hemispheres, domes, or rounded shapes) passively redirect incident light through multiple reflections and refractions, causing the structure itself to serve the light absorption function. This eliminates the need for external light-trapping mechanisms while maintaining manufacturing simplicity through standard semiconductor processing.

Inventive Principle:
Principle #25Self-service

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

The microstructured passivation layer significantly raises the absorption ratio of incident light, reduces reflection loss, and narrows the light beam, leading to improved light sensing capabilities in semiconductor image sensors.

Implementation Method 1

The microstructures enhance light absorption by providing a larger top surface area for multiple reflections and refractions

Methodology Applied
Scientific EffectRefraction: Refraction

Implementation Method 2

The microstructures enhance light absorption by providing a larger top surface area for multiple reflections and refractions

Methodology Applied
Scientific EffectReflection: Reflection

Data Source

PatentUS12243890B2Semiconductor device structure and manufacturing process thereof
Publication Date: 2025.03.04 TAIWAN SEMICONDUCTOR MANUFACTURING CO LTD
  • US12243890B2 patent drawing
  • US12243890B2 patent drawing
  • US12243890B2 patent drawing

AI summary

A semiconductor device structure for sensing an incident light includes a substrate, a passivation layer and a wiring structure. The substrate has a device embedded therein. The passivation layer is disposed on the substrate, where the passivation layer has a first side and a second side opposite to the first side, the first side of the passivation layer includes microstructures disposed on the substrate, and the second side of the passivation layer is a continuous flat plane, wherein each of the microstructures has a cross-section in a shape of a triangle, trapezoid or arc. The wiring structure is disposed on the substrate, where the writing structure includes at least one contact and metal interconnection patterns respectively formed in different dielectric layers, and the at least one contact and the metal interconnection patterns are electrically connected, where the substrate is located between the passivation layer and the wiring structure.