Microtechnology Layer Transfer via Dual Porous and Weakened Zones

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Solution Overview

Problem

Current microtechnological layer transfer processes are limited by imprecise control of fracture location and reduced productivity due to the need for sequential fragile zone development, which hampers efficient multi-layer processing in microtechnological component manufacturing.

Innovation Solution

A method involving the creation of two buried fragile zones with distinct characteristics, allowing for controlled mechanical or thermal separation, enabling double layer transfer and concurrent technological steps between separations, utilizing a combination of anodization and ion implantation to form porous and weakened zones with precise control over fracture location.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Manufacturing precision

If sequential fragile zone development is used to control fracture location, then manufacturing precision is improved, but productivity deteriorates due to reduced production speed

Engineering Contradiction:
Improvefracture location controlVSAvoidproduction speed
Core Design Contradiction:
Manufacturing precisionVSProductivity

Solution Approach 1:

The invention divides the transfer process into two independent simultaneous operations: a first transfer process creating a first fragile zone, and a second transfer process creating a second fragile zone. By segmenting the process into parallel independent streams rather than sequential steps, the patent achieves both precise fracture location control in each stream and increased overall productivity through concurrent processing.

Inventive Principle:
Principle #1Segmentation

Solution Approach 2:

The invention merges two transfer processes that operate simultaneously and independently within the same manufacturing system. By combining multiple fragile zone developments in parallel rather than executing them sequentially, the patent resolves the contradiction between maintaining precise fracture control and improving production speed.

Inventive Principle:
Principle #5Merging (Combining)

2Manufacturing precision

If sequential transfer processes are used, then fracture location control is maintained, but productivity deteriorates due to reduced efficiency in multi-layer processing

Engineering Contradiction:
Improvefracture location controlVSAvoidprocessing efficiency
Core Design Contradiction:
Manufacturing precisionVSProductivity

Solution Approach 1:

The invention enables continuous useful action by running two transfer processes simultaneously without interruption. While the first process develops its fragile zone and prepares for fracture, the second process independently develops its fragile zone in parallel. This continuous parallel operation maintains precision control in both streams while eliminating idle time between sequential operations, thereby improving overall processing efficiency.

Inventive Principle:
Principle #20Continuity of useful action

3Productivity

If multiple fragile zones are created in the same unit, then productivity is improved through parallel processing, but device complexity increases

Engineering Contradiction:
Improveproduction speedVSAvoidprocess complexity
Core Design Contradiction:
ProductivityVSDevice complexity

Solution Approach 1:

The invention segments the manufacturing system into two independent transfer process units, each capable of independently developing fragile zones. By dividing the system into separate functional modules rather than attempting to manage a single complex multi-layer process, the patent achieves parallel processing and increased productivity while keeping each individual process unit relatively simple and manageable.

Inventive Principle:
Principle #1Segmentation

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

This approach enhances production speed and flexibility by ensuring controlled fracture locations and allowing for parallel processing of microstructure treatments, increasing productivity while maintaining precision in microtechnological component manufacturing.

Implementation Method 1

the porous layer is formed of at least two sub-porous layers having different porosities, the porous sublayer of lower porosity is closer to the free surface than the other

Methodology Applied
Scientific EffectAnodizing: Anodising

Implementation Method 2

the weakened zone is formed by implantation of at least one gaseous species (in fact other options are possible, including the implantation of species causing the formation of precipitates which can be made liquid, when detachment is desired), at least hydrogen is implanted; alternatively, or in addition, at least helium is implanted

Methodology Applied
Scientific EffectIon implantation: Ion Implantation

Implementation Method 3

the first substrate is prepared by anodizing a starting substrate so as to make it porous on the surface then by epitaxial growth of a dense layer from this porous layer

Methodology Applied
Scientific EffectEpitaxy: Epitaxy

Implementation Method 4

detachment is caused at the level of the porous layer by localized application of mechanical energy

Methodology Applied
Scientific EffectMechanical stress-induced fracture: Fracture Mechanics

Implementation Method 5

the detachment is caused at the fragile zone by application of a heat treatment combined, or not, with an application of mechanical energy

Methodology Applied
Scientific EffectThermal treatment: Heat Treatment

Data Source

PatentEP2422365B1Microtechnology proven for transferring at least one layer
Publication Date: 2014.08.20 COMMISSARIAT A LENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES
  • EP2422365B1 patent drawingFigure 1~9

AI summary

A microtechnology proven for transferring at least one layer comprising steps in which: a first substrate 20 is prepared comprising a porous layer 11 buried under a useful surface at a non-zero distance; a weakened region 13 is formed by ion implantation between this porous layer and this useful surface; the first substrate is bonded to a supporting substrate 30; a mechanical stress is applied to cause separation at the porous layer so as to obtain, on the one hand, a remnant of the first substrate and, on the other hand, a separated layer rigidly connected to the supporting substrate and comprising a bared surface; processing steps are carried out on the bared surface of the separated layer; the separated layer is bonded, by way of the surface to which the processing steps were applied, to a second supporting substrate ; and a heat treatment is applied to cause separation at the weakened region so as to obtain, on the one hand, a remnant of the separated layer which is rigidly connected to the second supporting substrate and, on the other hand, a remnant of this separated layer which is rigidly connected to the first supporting substrate.