Micro-transfer Printed Photodiode Arrays for Broadband Detection
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Solution Overview
Problem
Conventional spectrometers using silicon photodiodes have limitations in wavelength selectivity and bandwidth, requiring color filters for narrower ranges, which increase complexity and cost, and struggle with angular reception and broader wavelength coverage.
Innovation Solution
A semiconductor device comprising a device body with integrated circuits and microphotodiodes of different sensitive spectral ranges, achieved through micro-transfer printing and bandgap engineering using various semiconductor materials like silicon, germanium, III-V, and II-IV compounds, allowing for a broadband and selective detector array with enhanced integration density and wavelength coverage.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Measurement precision
If color filters are used to adjust wavelength selectivity of photodiodes, then wavelength selectivity is improved, but device complexity and cost increase
Solution Approach 1:
The patent changes the fundamental parameter of the photodetector material bandgap to achieve wavelength selectivity. By using photodetectors with different bandgap energies (e.g., InGaAs, InP, GaAs with varying composition ratios), each detector inherently responds to specific wavelength ranges without requiring additional color filters, thus resolving the contradiction between selectivity and complexity
Solution Approach 2:
The patent employs composite material strategies by combining multiple photodetector materials with different bandgap characteristics on a single substrate. This allows the system to achieve broad spectral coverage with narrow bandwidth selectivity through material composition rather than adding filter components, reducing overall device complexity while maintaining high wavelength selectivity
2Ease of manufacture
If conventional silicon photodiodes are used, then manufacturing is simple, but bandwidth and wavelength coverage are limited
Solution Approach 1:
The patent creates a universal platform that can detect multiple wavelength ranges by integrating different photodetector materials (Si, InGaAs, InP, GaAs) on a single substrate. Each material type handles specific wavelength bands, making the system versatile across UV, visible, and infrared ranges while maintaining manufacturability through standardized integration processes
Solution Approach 2:
The patent segments the wavelength detection function across multiple photodetector materials, each optimized for specific spectral regions. Silicon handles visible light, InGaAs covers near-infrared, InP and GaAs address other infrared bands. This segmentation allows broad wavelength coverage while keeping each individual detector component relatively simple to manufacture
3Quantity of substance
If micro-transfer printing is used to apply semiconductor components, then integration density increases, but manufacturing process complexity increases
Solution Approach 1:
The patent applies preliminary action by pre-growing the photodetector materials and forming complete functional detector structures on separate sacrificial substrates before transfer. This includes completing epitaxial growth, contact formation, and metallization on the source wafer, then transferring the entire prepared structure to the target substrate in one step, thereby achieving high integration density while managing process complexity through pre-preparation
4Measurement precision
If photodetectors with narrow sensitive spectral range are used, then wavelength selectivity is improved, but productivity and integration density decrease
Solution Approach 1:
The patent merges multiple photodetector types with different spectral responses onto a single integrated substrate using micro-transfer printing technology. This allows narrow-band selective detectors (InGaAs, InP, GaAs with specific compositions) to be combined in high density, achieving both high wavelength selectivity and high integration density by consolidating multiple specialized detectors into one compact device
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The solution enables a higher integration density, cost reduction, and broader bandwidth, improving angular reception characteristics and covering wavelengths up to 1000 nm with better suppression of unwanted wavelengths, compared to conventional spectrometers.
Implementation Method 1
the semiconductor component or each of the plurality of semiconductor components comprises an active zone for receiving radiation... by means of which the radiation in the active zone is detected and a current or voltage is provided as a function of this radiation
Data Source
AI summary
A method for producing a semiconductor device may include applying one or more semiconductor components onto a device body where the device body has a substrate and an integrated circuit. The semiconductor component(s) may include an active zone configured to receive radiation. The method may further include transferring a multitude of semiconductor components from a sacrificial wafer to a target wafer with the device bodies still coupled by using a stamp to place them onto said device bodies. The stamp may be pressed onto the semiconductor components to adhere to the semiconductor components to the stamp and transfer them. As soon as the stamp moves in the opposite direction, the semiconductor component(s) may be separated from holding structures by breaking away webs or their projections on the second semiconductor body and leaving a breaking point directly on an outside of the semiconductor component.