Circumferential Microwave Chamber Layout for Uniform Substrate Heating
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Solution Overview
Problem
Conventional substrate processing apparatuses face inefficiencies in substrate heating and plasma generation due to the distance between the substrate and the microwave unit, leading to non-uniform heating and plasma generation.
Innovation Solution
The microwave unit is positioned along the circumference of the chamber, with a doughnut-shaped antenna featuring output slots that directly radiate microwaves to the substrate, enhancing temperature uniformity and plasma application efficiency.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Device complexity
If the microwave unit is positioned on the upper portion of the chamber, then the device structure is simple, but the substrate heating efficiency and plasma generation efficiency are reduced due to the far distance between the substrate and microwave unit
Solution Approach 1:
The microwave unit is repositioned from a vertical upper location to a circumferential arrangement around the chamber, changing the spatial dimension of microwave delivery. This circumferential positioning allows microwaves to reach the substrate from multiple directions simultaneously, reducing the effective distance and improving heating efficiency without significantly complicating the overall device structure.
Solution Approach 2:
The microwave unit is configured to deliver microwaves directly to the substrate surface, creating a localized high-energy region at the substrate-microwave interface. This direct radiation approach concentrates microwave energy where it is most needed, enhancing both heating efficiency and plasma generation at the substrate location.
2Device complexity
If the microwave unit is positioned on the upper portion of the chamber, then the device structure is simple, but the plasma generation uniformity inside the chamber is reduced
Solution Approach 1:
By arranging the microwave unit circumferentially around the chamber rather than positioning it only on the upper portion, the patent achieves three-dimensional microwave distribution. This multi-directional arrangement ensures uniform plasma generation across the entire substrate surface, as microwaves reach all areas from multiple angles simultaneously.
Solution Approach 2:
The microwave unit is divided into multiple segments arranged circumferentially around the chamber. Each segment contributes to plasma generation in a specific region, and the combined effect from all segments achieves uniform plasma distribution across the substrate, improving manufacturing precision.
3Productivity
If the microwave unit is positioned close to the substrate, then the substrate heating efficiency is improved, but the device complexity increases
Solution Approach 1:
The microwave unit is integrated into the chamber structure itself, with the circumferential microwave sources incorporated into the chamber wall or support structure. This merging approach allows close proximity to the substrate for efficient heating while avoiding the need for separate, complex positioning mechanisms, thereby maintaining relative structural simplicity.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This configuration increases substrate temperature uniformity and plasma application efficiency by directly supplying microwaves to the substrate, ensuring more uniform heating and effective plasma generation.
Implementation Method 1
a microwave unit for supplying microwaves to the processing space, wherein the microwave unit is formed along a circumference of the chamber, and is configured to directly radiate microwaves to the processing space of the chamber and to the substrate
Implementation Method 2
when a substrate W is heated or plasma is formed by using the microwave unit
Implementation Method 3
Plasma may be generated in an internal space of a chamber by using microwaves
Implementation Method 4
a plasma generation unit for ionizing the supplied gas into plasma
Data Source
AI summary
Proposed is a substrate processing apparatus. The substrate processing apparatus includes a chamber having a processing space therein, a substrate supporting unit disposed in the processing space and configured to support a substrate, and a microwave unit for supplying microwaves to the processing space. The microwave unit is formed along a circumference of the chamber, and is configured to directly radiate microwaves to the processing space of the chamber and to the substrate.