Microwave Cutoff Probe Structure for Precise Plasma Density Measurement

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Solution Overview

Problem

The increasing miniaturization and high integration of semiconductor elements have heightened the sensitivity of plasma processes, necessitating precise measurement of plasma parameters to ensure product quality.

Innovation Solution

A method and apparatus for measuring plasma parameters using a cutoff probe with line-shaped antennas and processors to calculate microwave band spectra and moving minima, enabling precise measurement of plasma density and processing control.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Measurement precision

If conventional plasma measurement methods are used, then measurement capability is provided, but measurement precision is insufficient for miniaturized semiconductor elements

Engineering Contradiction:
Improveplasma parameter measurement precisionVSAvoidsemiconductor product quality
Core Design Contradiction:
Measurement precisionVSManufacturing precision

Solution Approach 1:

The patent replaces conventional mechanical/electrical measurement probes with a microwave-based measurement system. The cutoff probe uses microwave radiation to measure plasma parameters non-invasively, substituting traditional contact-based measurement methods with electromagnetic wave-based measurement, thereby achieving higher precision for miniaturized semiconductor manufacturing processes.

Inventive Principle:
Principle #28Mechanics substitution (Replace mechanical system)

2Reliability

If a cutoff probe with multiple layers and shields is used, then measurement reliability is improved, but device complexity increases

Engineering Contradiction:
Improvemeasurement reliabilityVSAvoidcutoff probe structure complexity
Core Design Contradiction:
ReliabilityVSDevice complexity

Solution Approach 1:

The cutoff probe employs a nested multi-layer structure where the first antenna and second antenna are positioned within a probe body that includes multiple insulating layers and shields. The first insulating layer covers the first antenna, the second insulating layer covers the second antenna, and shields are positioned between these layers to isolate electromagnetic interference. This nested arrangement achieves reliable measurements while organizing complexity in a structured manner.

Inventive Principle:
Principle #7Nested doll (Nesting)

Solution Approach 2:

The patent introduces multiple intermediary elements including insulating layers and shields that mediate between the antennas and the external environment. These intermediaries isolate the measurement components from plasma interference and electromagnetic noise, ensuring reliable measurements without requiring the entire probe structure to be overly complex.

Inventive Principle:
Principle #24Intermediary (Mediator)

3Duration of action of stationary object

If antenna protection layers are added to the cutoff probe, then durability in plasma environment is improved, but manufacturing complexity increases

Engineering Contradiction:
Improveprobe durability in plasmaVSAvoidcutoff probe manufacturing ease
Core Design Contradiction:
Duration of action of stationary objectVSEase of manufacture

Solution Approach 1:

The cutoff probe employs composite material structures where antenna protection layers are applied over the first antenna and second antenna. These protection layers are designed to withstand the harsh plasma environment, providing durability to the probe components. The multi-material construction (combining conductive antenna materials with protective insulating materials) enhances longevity while maintaining manufacturability through standardized layering processes.

Inventive Principle:
Principle #40Composite materials

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

The solution provides accurate and reliable measurement of plasma parameters, enhancing the precision of plasma processes and improving the quality of semiconductor products.

Implementation Method 1

a first antenna having a line shape and configured to emit a microwave to the plasma in response to the signal provided by the at least one processor; a second antenna having a line shape and configured to generate an electrical signal in response to receiving the microwave that has been emitted by the first antenna and transferred through the plasma

Methodology Applied
Scientific EffectMicrowave emission and transmission: Electromagnetic Induction

Data Source

PatentUS20250146917A1Method of measuring parameters of plasma, apparatus for measuring parameters of plasma, plasma processing system, and method of processing wafer
Publication Date: 2025.05.08 SAMSUNG ELECTRONICS CO LTD
  • US20250146917A1 patent drawing
  • US20250146917A1 patent drawing
  • US20250146917A1 patent drawing

AI summary

An apparatus for measuring parameters of plasma includes a cutoff probe. The cutoff probe includes: a first antenna having a line shape and configured to emit a microwave to the plasma in response to the signal provided by at least one processor; a second antenna having a line shape and configured to generate an electrical signal in response to receiving the microwave emitted by the first antenna and transferred through the plasma; a first insulating layer; a second insulating layer; a first shield; a second shield; an end protection layer covering an end of each of the first insulating layer, the second insulating layer, the first shield, and the second shield; a first antenna protection layer, of insulating nature, covering the first antenna; and a second antenna protection layer, of insulating nature, covering the second antenna.