Microwave Oxidation Etching of Silicon Nitride Without Plasma Damage
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Solution Overview
Problem
Existing semiconductor processing technologies fail to efficiently remove materials from semiconductor substrates without damaging the remaining portions of features that are exposed during the etching process.
Innovation Solution
A microwave oxidation process is used to selectively remove the substrate from the semiconductor device, which includes a microwave process that is used to selectively remove the substrate from the semiconductor device.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If dry etch processes are used to selectively remove dielectric materials, then material removal selectivity is improved, but damage to underlying layers increases due to plasma generation and high temperatures
Solution Approach 1:
The patent changes the fundamental parameters of the etching process by using microwave energy instead of plasma, and operating at lower temperatures. This allows selective removal of silicon nitride dielectrics without the damaging effects of high temperature and plasma exposure on underlying layers
Solution Approach 2:
The patent substitutes the plasma-based chemical etching mechanism with a microwave-driven physical vapor deposition and oxidation mechanism. This replacement eliminates plasma generation while maintaining selective etching capability through material-specific microwave absorption and oxidation rates
2Productivity
If conventional etching processes are used to remove materials from semiconductor substrates, then material removal is achieved, but damage to remaining portions of features increases
Solution Approach 1:
The patent applies local quality by exploiting differences in microwave absorption properties and oxidation rates among various dielectric materials. Each material responds differently to microwave energy, enabling selective removal of specific layers while preserving others through tailored local chemical and physical transformations
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The process effectively removes the substrate from the semiconductor device, which includes a microwave oxidation process that is used to selectively remove the substrate from the semiconductor device, which includes a microwave oxidation process that is used to selectively remove the substrate from the semiconductor device.
Implementation Method 1
delivering a microwave energy for a period of time to the process gas to selectively etch the hardmask layer and the first layer
Implementation Method 2
delivering a microwave energy to the process gas to perform an etch operation on the substrate
Implementation Method 3
delivering a microwave energy to the process gas to perform an etch operation on the substrate. The etch operation selectively removes the second layer and the first feature structure
Implementation Method 4
delivering a microwave energy to the process gas for a period of time to selectively etch the first layer
Data Source
AI summary
According to one or more embodiments, a method includes positioning a substrate within a processing chamber. The substrate includes a hardmask layer disposed over a surface of the substrate, a first layer disposed over the hardmask layer, and a second layer disposed over the first layer. The method further includes flowing a process gas into the processing chamber, and delivering a microwave energy for a period of time to the process gas to selectively etch the hardmask layer and the first layer, wherein delivering the microwave energy to the process gas does not generate a plasma.