Microwave Package Cavity Resonance Control
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Solution Overview
Problem
Semiconductor packages for microwave and millimeter wave bands face challenges in maintaining desired high-frequency characteristics due to overlapping cavity resonant frequencies with operation frequencies, leading to undesired oscillations and reduced bandwidth, particularly with the use of dielectric caps which increase permittivity and decrease resonant frequencies.
Innovation Solution
A high-frequency package design featuring a conductor base plate, dielectric cap with a metal film on the front side, and vias for electrical connection between the metal films, which increases the difference between lowest-order and second-lowest-order cavity resonant frequencies while providing electromagnetic shielding.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Power
If package dimensions are increased to accommodate higher output power and higher frequencies, then the package can support higher power and frequency requirements, but the cavity resonant frequency decreases and overlaps with the operation frequency band
Solution Approach 1:
The cavity is divided into multiple segments by providing partition walls (first partition wall and second partition wall) that extend from the bottom surface toward the top surface. This segmentation creates multiple smaller cavity spaces, each with its own resonant frequency, thereby preventing the overall cavity resonant frequency from overlapping with the operation frequency band while maintaining the required package dimensions for high power output.
Solution Approach 2:
Dielectric members are selectively positioned at specific locations within the cavity (between the amplifier chip and the top surface, and between the dividing circuit board and the top surface) to locally adjust the electromagnetic field distribution. This local modification of dielectric properties allows precise control over the cavity resonant frequency without requiring overall package dimension changes.
2Ease of manufacture
If a dielectric cap is used to replace metal cap, then cost is reduced and manufacturing is simplified, but the cavity resonant frequency decreases due to higher permittivity
Solution Approach 1:
Instead of using a complete dielectric cap that would uniformly increase permittivity throughout the cavity, dielectric members are selectively positioned only at specific locations where electromagnetic field concentration occurs. This localized approach provides the necessary frequency adjustment while minimizing the overall impact on cavity resonant frequency and maintaining the cost benefits of dielectric materials.
Solution Approach 2:
The permittivity parameters of dielectric members are carefully selected and adjusted to achieve the desired resonant frequency shift. By controlling the permittivity values and positions of these dielectric members, the cavity resonant frequency can be precisely tuned without requiring complete dielectric cap construction.
3Reliability
If partition walls are added to divide the cavity, then the cavity resonant frequency can be increased, but the method of mounting semiconductor elements and dimensions of circuit substrates are significantly limited
Solution Approach 1:
Instead of using complete partition walls that would divide the entire cavity space and restrict mounting flexibility, the invention uses partition walls that extend only partially from the bottom surface toward the top surface. This partial segmentation approach adjusts the resonant frequency while leaving sufficient open space for various semiconductor element mounting methods and circuit substrate configurations.
Solution Approach 2:
The partition walls are designed to extend in a controlled manner from the bottom surface toward the top surface without fully connecting, creating a three-dimensional segmented structure. This dimensional approach allows frequency control through spatial segmentation while maintaining mounting flexibility by not completely dividing the cavity space.
4Reliability
If the operation frequency band and cavity resonant frequency are kept apart, then desired high-frequency characteristics can be obtained, but package development period increases and cost reduction is inhibited
Solution Approach 1:
The partition wall structure and dielectric member configuration can be adjusted through simple parameter changes (dimensions, positions, permittivity values) to accommodate different operation frequency bands. This universal design approach allows the same basic package structure to be adapted for various frequency requirements without requiring complete redesign, thereby reducing development time and cost.
Solution Approach 2:
By providing adjustable parameters such as partition wall dimensions, dielectric member positions and permittivity values, the cavity resonant frequency can be tuned to avoid overlap with different operation frequency bands. This parameter-based adjustment mechanism enables rapid adaptation to different frequency requirements without extensive redesign.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This design effectively widens the bandwidth of the package by maximizing the frequency difference between resonant modes, reducing undesired resonances, and ensuring reliable electromagnetic shielding, enabling operation across a wider frequency range.
Implementation Method 1
a front-side metal film provided on an outer surface of the dielectric cap... an electromagnetic shielding effect can be maintained as in the case where a metal cap is used
Implementation Method 2
a plurality of vias provided to pass through the dielectric cap and achieve electrical connection between the front-side metal film and the first back-side metal film and electrical connection between the front-side metal film and the conductor portion of the side wall
Implementation Method 3
a high-frequency package design featuring a conductor base plate, dielectric cap with a metal film on the front side, and vias for electrical connection between the metal films, which increases the difference between lowest-order and second-lowest-order cavity resonant frequencies
Data Source
AI summary
A package includes a conductor base plate having a element fixed to an upper surface thereof, a side wall provided on the conductor base plate to surround the element, the side wall having a conductor portion electrically connected to the conductor base plate, a dielectric cap disposed on the side wall, a front-side metal film provided on an outer surface of the dielectric cap, a first back-side metal film provided on an inner surface of the dielectric cap such that a center of the first back-side metal film approximately coincides with a center of a surface of the dielectric cap which faces the conductor base plate, and a plurality of vias passing through the dielectric cap to achieve electrical connection between the front-side metal film and the first back-side metal film and between the front-side metal film and the conductor portion oldie side wall.


