Microwave Passivation Removal for Low-k Via Protection
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Solution Overview
Problem
Existing capacitively coupled plasma (CCP) techniques for removing passivation layers in semiconductor fabrication cause low-k carbon loss and hydrogen plasma damage to underlying layers.
Innovation Solution
A microwave assisted process is used to remove passivation layers without generating plasma, employing microwave energy to excite process gases and maintain a vacuum environment, reducing damage to underlying layers.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Productivity
If capacitively coupled plasma (CCP) technique is used to remove passivation layer, then passivation layer removal is achieved, but low-k carbon loss and hydrogen plasma damage occur
Solution Approach 1:
The patent changes the fundamental parameter of the removal process by switching from plasma-based chemistry to microwave-based physical heating. This parameter change allows passivation layer removal without the harmful chemical effects of plasma, thereby eliminating low-k carbon loss and hydrogen plasma damage while maintaining removal efficiency
Solution Approach 2:
The patent replaces the plasma-based chemical removal mechanism with a microwave-based thermal mechanism. By substituting the plasma field with microwave electromagnetic fields that generate heat through dielectric heating, the process achieves passivation layer removal without plasma-induced damage to underlying layers
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The method minimizes low-k carbon loss and hydrogen plasma damage, preserving the integrity of underlying layers during passivation layer removal.
Implementation Method 1
delivering microwave energy to the process gas, wherein delivering the microwave energy to the process gas does not generate a plasma in the processing chamber
Data Source
AI summary
A method of processing a substrate, includes performing a preclean process to form an exposed surface of a conductive layer within a via formed in a dielectric layer formed over the conductive layer, forming a passivation layer over the exposed surface of the conductive layer, and removing the passivation layer using a microwave assisted process.