Microwave Waveguide Phase Control for Uniform Batch Plasma Processing

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Solution Overview

Problem

Existing batch-type substrate processing apparatuses with inductively coupled plasma sources face challenges in achieving uniform electric field strength and efficient power absorption in plasma generation, leading to non-uniform processing results and reduced productivity.

Innovation Solution

A semiconductor manufacturing apparatus with a microwave introducing unit featuring a rectangular waveguide and phase controller, which generates a surface wave plasma by controlling the phase of microwaves, ensuring uniform electric field distribution and improved power absorption efficiency.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Manufacturing precision

If an inductively coupled plasma source is used in a batch-type substrate processing apparatus, then processing capability is provided, but uniform electric field strength distribution and efficient radical species delivery cannot be achieved

Engineering Contradiction:
Improveuniformity of electric field strengthVSAvoidprocessing efficiency
Core Design Contradiction:
Manufacturing precisionVSProductivity

Solution Approach 1:

The patent replaces the inductively coupled plasma source with a microwave-based plasma generation system. Specifically, it uses a rectangular waveguide with slots to introduce microwaves into the processing chamber, generating plasma through microwave-electron interaction rather than inductive coupling. This substitution enables superior electric field uniformity and radical species delivery efficiency, directly resolving the technical contradiction between manufacturing precision and productivity.

Inventive Principle:
Principle #28Mechanics substitution (Replace mechanical system)

Solution Approach 2:

The patent changes the fundamental operating parameters of the plasma generation system by transitioning from inductive coupling to microwave excitation. The microwave frequency (typically 2.45 GHz) and the slot geometry in the rectangular waveguide are optimized to achieve uniform electric field distribution across the substrate surface. This parameter change enables simultaneous achievement of high uniformity and processing efficiency.

Inventive Principle:
Principle #35Parameter changes

2Quantity of substance

If conventional plasma sources are used, then processing can be performed, but radical species delivery efficiency is insufficient

Engineering Contradiction:
Improveradical species deliveryVSAvoidprocessing efficiency
Core Design Contradiction:
Quantity of substanceVSProductivity

Solution Approach 1:

The patent replaces conventional inductive plasma sources with a microwave-based system that generates higher density radical species. The microwave energy directly couples with electrons to produce a more efficient plasma chemistry environment, increasing the quantity of reactive radical species available for processing. This substitution simultaneously improves both radical delivery efficiency and overall processing productivity.

Inventive Principle:
Principle #28Mechanics substitution (Replace mechanical system)

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

The apparatus achieves enhanced uniformity of electric field strength and improved productivity by generating a surface wave plasma with controlled phase shifts, reducing exudation and enhancing reactive species supply.

Implementation Method 1

a microwave introducing unit that generates a plasma from the processing gas by introducing microwaves

Methodology Applied
Scientific EffectMicrowave radiation: Microwave Radiation

Implementation Method 2

generates a plasma from the processing gas

Methodology Applied
Scientific EffectPlasma generation: Plasma

Implementation Method 3

a phase controller that is provided at a terminating end of the rectangular waveguide and controls a phase of the microwaves propagating in the rectangular waveguide

Methodology Applied
Scientific EffectPhase control: Phase Modulation

Data Source

PatentUS12609285B2Semiconductor manufacturing apparatus and manufacturing method for semiconductor device
Publication Date: 2026.04.21 TOKYO ELECTRON LTD
  • US12609285B2 patent drawing
  • US12609285B2 patent drawing
  • US12609285B2 patent drawing

AI summary

A semiconductor manufacturing apparatus includes: a processing container that accommodates a substrate holder that holds a plurality of substrates in a shelf shape; a gas supply that supplies a processing gas into the processing container; and a microwave introducer that generates a plasma from the processing gas. The microwave introducer includes: a rectangular waveguide provided along a length direction of the processing container and including a plurality of slots that radiates microwaves; and a phase controller that is provided at an end of the rectangular waveguide and controls a phase of the microwaves propagating in the rectangular waveguide.