Microwave Remote Plasma for 2D Material Deposition
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Solution Overview
Problem
Current semiconductor fabrication processes face challenges in achieving precise control over deposition processes for submicron features, particularly in generating neutral species for low-temperature film depositions, which affects the quality of two-dimensional films like graphene and transition metal dichalcogenides.
Innovation Solution
A multi-chamber processing platform utilizing a remote plasma system with a microwave source for generating radicals, allowing for the deposition of chalcogenide films and other materials with high uniformity and control, including annealing, dielectric, and metal layers, to support the formation of high-aspect-ratio interconnects and two-dimensional materials.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If conventional deposition processes (CVD, ALD, PECVD) are used to deposit films, then film deposition can be achieved, but precise control over gas distribution uniformity, reacting species generation, and concentration uniformity is difficult, especially for two-dimensional films with thickness less than one nanometer
Solution Approach 1:
The patent replaces conventional thermal or plasma-based activation methods with microwave radiation to generate radicals. The microwave source (24 GHz) directly excites molecular vibrations and rotations of precursor gases, enabling controlled radical generation without complex thermal fields or plasma discharge control, thus simplifying the deposition process while achieving atomic-layer precision.
Solution Approach 2:
The patent changes the fundamental parameter for generating reacting species from thermal energy or plasma power to microwave frequency radiation (24 GHz). This parameter change enables precise control over radical generation rates by tuning microwave power and frequency, achieving uniform deposition of two-dimensional films with thickness control at the sub-nanometer level.
2Manufacturing precision
If microwave plasma energy is used to generate reacting species, then deposition can occur, but control over the amount of gases provided to the substrate surface is challenging for achieving uniform two-dimensional films
Solution Approach 1:
The patent substitutes microwave radiation for conventional plasma generation methods. The microwave source directly couples energy to molecular modes of precursor gases, creating radicals through vibrational excitation rather than through complex plasma discharge control. This substitution simplifies gas flow control while maintaining uniform radical distribution across the substrate surface.
Solution Approach 2:
The patent introduces microwave radiation as an intermediary between the gas phase precursors and the substrate. The microwave energy acts as a mediator that uniformly distributes activation energy across the reaction zone, ensuring consistent radical generation and uniform film deposition without requiring complex gas flow manipulation.
3Reliability
If low temperature deposition is used for two-dimensional materials, then material quality is improved, but generation of sufficient neutral species becomes difficult
Solution Approach 1:
The patent changes the activation mechanism from thermal energy (which requires high temperatures) to microwave radiation at 24 GHz. This parameter change enables efficient radical generation at low substrate temperatures by directly exciting molecular vibrations and rotations of precursor gases, providing sufficient reacting species concentration while maintaining low temperature conditions for high-quality two-dimensional film formation.
Solution Approach 2:
The patent utilizes the phase transition from molecular precursors to radical species through microwave-induced vibrational excitation. The microwave energy causes molecules to undergo vibrational transitions that lead to bond dissociation and radical formation, providing a pathway to generate sufficient neutral species at low temperatures where conventional thermal methods would be ineffective.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach enhances the precision and quality of semiconductor film deposition, enabling the production of high-aspect-ratio features and two-dimensional materials with improved electrical, mechanical, and thermal properties, suitable for next-generation VLSI and ULSI devices.
Implementation Method 1
A remote plasma source may be utilized which includes a microwave source
Implementation Method 2
A remote plasma source may be utilized which includes a microwave source
Data Source
AI summary
Embodiments described herein provide a remote plasma system utilizing a microwave source. Additionally, generation and deposition techniques for 2D transition metal chalcogenides with large area uniformity utilizing microwave assisted generation of radicals is disclosed. Plasma may be generated remotely utilizing the microwave source. A processing platform configured to deposit 2D transition metal chalcogenides is also disclosed.