Microwave Plasma Dielectric Treatment for Low-Heat CFET Contacts
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Solution Overview
Problem
Existing semiconductor fabrication methods face challenges in forming dielectric materials with high quality and uniformity, particularly in high-aspect ratio regions, which can lead to thermal damage and performance issues in metal gate structures due to high-temperature annealing processes.
Innovation Solution
A method involving spin-on deposition of dielectric materials followed by microwave plasma treatment is employed, allowing for low-thermal-budget processing to form a uniform and dense dielectric layer without seams, thereby reducing thermal impact on metal gate structures.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If high-temperature annealing processes are used to form dielectric materials, then dielectric quality and density are improved, but thermal damage occurs to metal gate structures
Solution Approach 1:
The patent changes the processing temperature parameter from high-temperature annealing to low-temperature microwave plasma treatment, achieving dielectric material densification and quality improvement without exposing metal gate structures to damaging thermal conditions. This parameter substitution resolves the contradiction by finding an alternative processing condition that achieves the same quality improvement without the harmful thermal effects.
Solution Approach 2:
The patent replaces the thermal processing mechanism (annealing) with a non-thermal microwave plasma mechanism. Instead of using heat to densify and improve dielectric quality, the invention uses microwave plasma treatment, which achieves the same quality improvement through a different physical mechanism that does not involve high temperatures, thereby avoiding thermal damage to metal gates.
2Ease of manufacture
If conventional deposition methods are used for dielectric materials, then formation process is simple, but dielectric uniformity and quality in high-aspect ratio regions are poor
Solution Approach 1:
The patent applies microwave plasma treatment immediately after dielectric material deposition, while the material is still in a relatively unstable state. This preliminary treatment densifies the dielectric material and improves its uniformity before subsequent processing steps, ensuring high-quality dielectric layers in high-aspect ratio regions without requiring complex deposition processes.
Solution Approach 2:
The patent introduces microwave plasma treatment as an additional processing step that changes the physical and chemical parameters of the dielectric material, transforming it from a less dense, less uniform state to a denser, more uniform state. This parameter transformation achieves high dielectric quality in high-aspect ratio regions while maintaining process simplicity.
3Adaptability or versatility
If dielectric material is deposited in high-aspect ratio regions, then device functionality is achieved, but dielectric quality and uniformity deteriorate
Solution Approach 1:
The patent applies microwave plasma treatment specifically to dielectric materials in high-aspect ratio regions, providing localized quality improvement where it is most needed. This targeted treatment ensures that dielectric materials in challenging high-aspect ratio regions achieve the same high quality and uniformity as materials in easier-to-process regions, enabling device functionality without sacrificing dielectric quality.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The method achieves a dielectric layer with improved quality and consistency, minimizing thermal damage to metal gates and enhancing device performance by avoiding high-temperature annealing, thus ensuring precise etchback and planarization processes.
Implementation Method 1
treating the dielectric material with a microwave (MW) plasma
Implementation Method 2
The MW plasma treatment may include reconstruction and/or densification of the deposited dielectric material through introduction of MW plasma
Data Source
AI summary
A low thermal budget dielectric material deposition process is provided. The dielectric material may be deposited using spin-on coating, and treated with a microwave plasma treatment. In some implementations, the dielectric material is used adjacent a contact feature of a CFET device, such as a contact feature providing connection to a source/drain region of a bottom transistor of a CFET device.