Microwave Radical Cleaning for Throttle Valve and Foreline Residue
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Solution Overview
Problem
Conventional systems face challenges in maintaining process uniformity and controlling throttle valve drift due to residue accumulation, which is exacerbated by high temperature purge gases that can harm chamber components.
Innovation Solution
Integrating a radical generator, such as a microwave radical generator, proximate to the throttle valve to generate plasma radicals that clean residue within the foreline and throttle valve, reducing the need for high temperature purges and minimizing component exposure.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If high temperature purge gases are used to clean residue from the foreline and throttle valve, then cleaning effectiveness is improved, but chamber components are harmed due to thermal damage
Solution Approach 1:
The patent replaces the thermal cleaning mechanism (high temperature purge gases) with a plasma-based chemical cleaning mechanism. The radical generator produces reactive species that chemically react with and remove residue through cold plasma chemistry, eliminating the need for high temperature exposure that damages chamber components.
Solution Approach 2:
The invention changes the fundamental parameter of cleaning temperature from high temperature (thermal purge) to low temperature (plasma radicals). By operating the radical generator at or near room temperature, the system achieves effective residue removal while maintaining chamber component integrity, thus resolving the contradiction between cleaning effectiveness and thermal damage prevention.
2Reliability
If high temperature purges are used to remove residue, then residue accumulation is reduced, but component longevity is decreased due to thermal stress
Solution Approach 1:
The patent substitutes thermal stress-based residue removal with plasma chemistry-based removal. The radical generator produces reactive species that selectively react with and remove residue through chemical reactions at low temperatures, preserving component longevity while maintaining effective cleaning.
Solution Approach 2:
The invention converts the potentially harmful effect of high temperature (which damages components) into a beneficial low-temperature plasma process. By using plasma radicals generated at or near room temperature, the system achieves the residue removal function previously requiring high temperature, thereby protecting components from thermal stress and extending their operational life.
3Manufacturing precision
If a radical generator is integrated proximate to the throttle valve, then process control is enhanced through active residue management, but device complexity increases
Solution Approach 1:
The patent extracts the cleaning function from the main processing system by using a separate, dedicated radical generator unit. This modular approach allows the cleaning function to be added independently, improving process control through active residue management while minimizing the impact on overall system complexity. The radical generator operates as a standalone component that can be integrated without redesigning the entire system.
Solution Approach 2:
The radical generator acts as an intermediary component between the foreline/throttle valve and the main processing chamber. It provides active residue management by generating plasma radicals that flow through the foreline and clean the throttle valve, thereby enhancing process control uniformity without requiring direct modification of the throttle valve or chamber structure, thus limiting the increase in device complexity.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The solution effectively cleans residue while maintaining throughput and reducing throttle valve drift, thus enhancing process control and component longevity without the adverse effects of high temperature purges.
Implementation Method 1
generating a plasma of the second gas within the radical generator
Implementation Method 2
a radical generator, such as a microwave radical generator
Data Source
AI summary
Exemplary semiconductor processing systems may include a processing chamber defining a processing region. The systems may include a foreline coupled with the processing chamber, the foreline defining a fluid conduit. The systems may include a radical generator having an inlet and an outlet. The outlet may be fluidly coupled with the foreline. The systems may include a gas source fluidly coupled with the inlet of the radical generator. The systems may include a throttle valve coupled with the foreline downstream of the radical generator.